Pressure-dependent photoluminescence and strain response of a 1.7  <i>μ</i> m cutoff InGaAsSb/AlGaAsSb multi-quantum well

Abstract

The photoluminescence response of a molecular beam epitaxy-grown InGaAsSb/AlGaAsSb multi-quantum well heterostructure is examined as a function of hydrostatic pressure up to 1.35 GPa at a cryogenic temperature of 10 K. Pressure is applied hydrostatically using a diamond anvil cell, within which the pressure is calibrated via ruby fluorescence. A systematic blue shift in the photoluminescence peak energy is observed, with a pressure coefficient of approximately 77 meV/GPa. The integrated photoluminescence intensity decreases systematically with pressure, indicating enhanced non-radiative recombination through a defect level located above the conduction band edge at atmospheric pressure that becomes electronically active at sufficiently high applied pressure. The strain in the quantum well is quantified using the Murnaghan equation of state, and the hydrostatic deformation potential is extracted from the energy-strain relation, yielding a value of a = −4.4 eV. These results provide insight into the pressure-induced modulation of the band structure in quaternary III–V heterostructures and its potential utility for defect studies to improve infrared cameras for advanced aviation.