PO<sub>4</sub><sup>3−</sup> Tetrahedron Assisted Chelate Engineering for 10.67%‐Efficient Antimony Selenosulfide Solar Cells

D Donglou Ren (State Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials and School of Resources Environment and Materials Guangxi University Nanning China) B Boyang Fu (Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering) J Jun Xiong (Institute for Energy Research) Y Yi Wang B Bin Zhu S Shuo Chen Z Zhiqiang Li (Key Laboratory of Green Chemistry & Technology, Ministry of Education, College of Chemistry) H Hongli Ma X Xianghua Zhang D Daocheng Pan (State Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials and School of Resources Environment and Materials Guangxi University Nanning China) B Bingsuo Zou G Guangxing Liang

Abstract

AbstractAnisotropic carrier transport and deep‐level defect of antimony selenosulfide (Sb2(S,Se)3) absorber are two vital auses restraining the photovoltaic performance of this emerging thin‐film solar cell. Herein, chelate engineering is proposed to prepare high‐quality Sb2(S,Se)3 film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO43− ion in dibasic sodium phosphate (Na2HPO4, DSP). The PO43− Lewis structure, on one hand in the form of [(SbO)3(PO4)] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO43− inhibits horizontal growth of (Sb4S(e)6)n ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO43− effectively passivates the antisite defect SbS1. These synergistic effects have effectively improved carrier transport and reduced non‐radiative recombination of the Sb2(S,Se)3 absorber. Consequently, the DSP‐modified Sb2(S,Se)3 device efficiency increases from 8.59% to 10.67%.

Article Details

Volume / Issue Vol. 37, Issue 8
Published February 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

D

Donglou Ren

State Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials and School of Resources Environment and Materials Guangxi University Nanning China

B

Boyang Fu

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering

J

Jun Xiong

Institute for Energy Research

Y

Yi Wang

B

Bin Zhu

S

Shuo Chen

Z

Zhiqiang Li

Key Laboratory of Green Chemistry & Technology, Ministry of Education, College of Chemistry

H

Hongli Ma

X

Xianghua Zhang

D

Daocheng Pan

State Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials and School of Resources Environment and Materials Guangxi University Nanning China

B

Bingsuo Zou

G

Guangxing Liang