Point Defect Engineering Thermoelectrics: From Disorder to Order

Y Yang Zhang Y Yuxuan Yang G Guyang Peng T Tong Song R Rongrong Li W Wanbo Qu K Kangjin Zhou (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) T Tianle Xie (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) C Chaoliang Zhang (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) K Kun Wang (Beijing National Laboratory for Molecular Science, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering) Z Zhihao Zhao J Jiandong Wang X Xianghong Zhou (State Key Laboratory for Mechanical Behavior of Materials Electronic Materials Research Laboratory (Key Lab of Education Ministry) School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an China) Y Yuetao Zhang (State Key Laboratory for Mechanical Behavior of Materials Electronic Materials Research Laboratory (Key Lab of Education Ministry) School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an China) Y Yushan Guo Y Yihua Zhang (Center of Drug Discovery, State Key Laboratory of Natural Medicines) X Xingwu Zou (Qinghai Institute of Salt Lakes (ISL) Chinese Academy of Sciences Xining China) J JinXiao Bao (School of Materials Science and Engineering, Inner Mongolia University of Science and Technology 2 , Baotou 014010,) S Shengwu Guo (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) S Stephen J. Pennycook (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) F Fei Li J Jun Sun X Xiangdong Ding H Haijun Wu

Abstract

ABSTRACT The persistent coupling between lattice thermal conductivity ( κ L ) and carrier mobility ( µ ) remains the central bottleneck in thermoelectric optimization: randomly distributed defects that scatter phonons inevitably degrade electron transport. This review establishes the disorder‐to‐order transition of crystallographic defects as a unifying design principle to overcome this trade‐off. We systematically examine three defect families, including substitutional atoms, vacancies, interstitials and antisite defects demonstrate how their spatial reconfiguration from random distributions into ordered architectures fundamentally decouples phonon and electron transport. Representative examples include iso‐size alloying and symmetry enhancement in substitutional systems, vacancy‐derived dislocation networks and ordered vacancy layers, lattice planarization via targeted vacancy filling, and self‐assembled interstitial clusters and climb dislocations. We further extend this paradigm into the mechanical domain, showing that ordered interstitials at twin boundaries simultaneously enhance mechanical strength and thermoelectric performance. A consistent conclusion emerges across all systems: performance gains arise from controlling defect spatial arrangement rather than introducing additional disorder, offering a coherent framework for the next generation of high‐performance, mechanically robust thermoelectric materials.

Article Details

Volume / Issue Vol. 38, Issue 29
Published May 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (24)

Y

Yang Zhang

Y

Yuxuan Yang

G

Guyang Peng

T

Tong Song

R

Rongrong Li

W

Wanbo Qu

K

Kangjin Zhou

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

T

Tianle Xie

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

C

Chaoliang Zhang

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

K

Kun Wang

Beijing National Laboratory for Molecular Science, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering

Z

Zhihao Zhao

J

Jiandong Wang

X

Xianghong Zhou

State Key Laboratory for Mechanical Behavior of Materials Electronic Materials Research Laboratory (Key Lab of Education Ministry) School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an China

Y

Yuetao Zhang

State Key Laboratory for Mechanical Behavior of Materials Electronic Materials Research Laboratory (Key Lab of Education Ministry) School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an China

Y

Yushan Guo

Y

Yihua Zhang

Center of Drug Discovery, State Key Laboratory of Natural Medicines

X

Xingwu Zou

Qinghai Institute of Salt Lakes (ISL) Chinese Academy of Sciences Xining China

J

JinXiao Bao

School of Materials Science and Engineering, Inner Mongolia University of Science and Technology 2 , Baotou 014010,

S

Shengwu Guo

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

S

Stephen J. Pennycook

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

F

Fei Li

J

Jun Sun

X

Xiangdong Ding

H

Haijun Wu