Piezoelectric micropatterns fabricated by femtosecond laser processing for <i>d</i> 33-mode piezoelectric MEMS

J Jundong Song (Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,) H Hiumi Terashima (Department of Physical Science and Engineering, Nagoya Institute of Technology 3 , Nagoya, Aichi 466-8555,) N Naoki Shibao (Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,) T Takashi Nakajima (Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,) T Takashi Iijima (Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,) X Xi Yu T Takashi Harumoto (Department of Materials Science and Engineering, Institute of Science Tokyo 2 , Meguro, Tokyo 152-8550,) J Ji Shi S Shingo Ono S Soichiro Okamura (Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,)

Abstract

Fabrication of micropatterns on piezoelectric thin films has been widely investigated as an effective approach to release lateral clamping and improve d33-mode piezoelectric performance. Among various micromachining techniques, femtosecond laser processing has emerged as a promising candidate due to its single-step, maskless, non-destructive, and high-throughput characteristics. However, reports on using this method for patterning piezoelectric materials remain insufficiently explored, particularly for the application of d33-mode devices. In this study, line-shaped micropatterns were successfully fabricated in Pb(Zr,Ti)O3 (PZT) thin films using femtosecond laser processing. Post-annealing effectively restored crystallinity degraded during laser processing, enabling the micropatterns to maintain stable dielectric insulation and ferroelectric switching. The fabricated micropatterns exhibit d33 values comparable to bulk PZT, validating the effectiveness of stress release from substrate clamping. These results demonstrate that femtosecond laser processing offers a feasible route for the high-throughput fabrication of high-performance d33-mode piezoelectric MEMS devices.

Article Details

Volume / Issue Vol. 139, Issue 4
Published January 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (10)

J

Jundong Song

Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,

H

Hiumi Terashima

Department of Physical Science and Engineering, Nagoya Institute of Technology 3 , Nagoya, Aichi 466-8555,

N

Naoki Shibao

Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,

T

Takashi Nakajima

Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,

T

Takashi Iijima

Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,

X

Xi Yu

T

Takashi Harumoto

Department of Materials Science and Engineering, Institute of Science Tokyo 2 , Meguro, Tokyo 152-8550,

J

Ji Shi

S

Shingo Ono

S

Soichiro Okamura

Department of Applied Physics, Tokyo University of Science 1 , Katsushika, Tokyo 125-8585,