Physics, modeling, and benchmarking of ULTRARAM: A compound semiconductor-based memory device

Abstract

ULTRARAM is a promising emerging memory exhibiting high endurance, long retention, and ultra-low switching energy per unit area. This compound semiconductor-based non-volatile memory utilizes triple barrier resonant tunneling (TBRT) through InAs/AlSb heterostructures. In this work, we have proposed a physics-based compact model of ULTRARAM memory device that captures the real-time trapping/de-trapping of charges in the floating gate and used to calculate the device characteristics. In addition, we have performed numerical simulations of the TBRT stack using the Schrödinger equation inside the quantum well with mono-layer (∼0.6 nm) variations to check the impact on memory characteristics of the device. Array-level simulations and benchmarking highlight the promise of this technology.