Physics-constrained inverse estimation of irradiation-induced strain in He–H ion-implanted 4H-SiC using nanoindentation and finite element modeling
Abstract
Nanoindentation is widely used to evaluate the mechanical properties of irradiated materials; however, its potential for quantifying irradiation-induced subsurface strain remains underexplored. In this work, an integrated experimental–numerical framework based on a physics-constrained inverse modeling approach is employed to estimate the magnitude of a depth-dependent irradiation-induced strain distribution in single-crystal 4H-SiC following sequential He and H ion implantation. The approach combines depth-sensing nanoindentation, finite element modeling (FEM), and a simplex-based inverse optimization routine to calibrate a physically motivated eigenstrain profile derived from ion-damage simulations. The strain field is assumed to follow a lognormal distribution consistent with independently determined damage profiles (stopping and range of ions in matter) and is implemented in the FEM model through a depth-dependent thermal expansion formulation. By minimizing the squared error between simulated and experimental force–displacement curves, the peak tensile strain is estimated to be ∼0.91%, accompanied by an effective Young's modulus of 310 GPa and a yield strength of 16.4 GPa. Independent validation by nano-beam precession electron diffraction confirms good agreement between the reconstructed and experimentally measured out-of-plane strain profiles in both magnitude and spatial distribution. The results demonstrate that nanoindentation, when combined with physics-based inverse modeling, can provide a practical tool for quantifying irradiation-induced strain and residual stress in nuclear ceramics. This methodology offers a complementary approach to diffraction-based techniques for assessing subsurface damage in ion-irradiated materials relevant to advanced nuclear systems.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (11)
M. Bensalem
Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,
N. Daghbouj
Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,
J. Duchoň
Institute of Physics of the Czech Academy of Sciences 2 , Na Slovance 1999/2, Prague 8 182 21,
B. S. Li
State Key Laboratory for Environment-friendly Energy Materials, Southwest University and Technology 3 , Mianyang 621010, Sichuan,
A. T. AlMotasem
Department of Physics, Faculty of Science, Assiut University 1 , Assiut 71516,
S. Magalhães
IPFN, Instituto Superior Técnico, Universidade de Lisboa 4 , Estrada Nacional 10, Bobadela LRS 2695-066,
A. Yi
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 5 , Shanghai 200050,
F. Munnik
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research 6 , Bautzner Landstr. 400, Dresden 01328,
Xin Ou
W. J. Weber
Department of Materials Science and Engineering, University of Tennessee 7 , Knoxville 37996, Tennessee,
T. Polcar
Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,