Physics-constrained inverse estimation of irradiation-induced strain in He–H ion-implanted 4H-SiC using nanoindentation and finite element modeling

M M. Bensalem (Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,) N N. Daghbouj (Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,) J J. Duchoň (Institute of Physics of the Czech Academy of Sciences 2 , Na Slovance 1999/2, Prague 8 182 21,) B B. S. Li (State Key Laboratory for Environment-friendly Energy Materials, Southwest University and Technology 3 , Mianyang 621010, Sichuan,) A A. T. AlMotasem (Department of Physics, Faculty of Science, Assiut University 1 , Assiut 71516,) S S. Magalhães (IPFN, Instituto Superior Técnico, Universidade de Lisboa 4 , Estrada Nacional 10, Bobadela LRS 2695-066,) A A. Yi (State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 5 , Shanghai 200050,) F F. Munnik (Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research 6 , Bautzner Landstr. 400, Dresden 01328,) X Xin Ou W W. J. Weber (Department of Materials Science and Engineering, University of Tennessee 7 , Knoxville 37996, Tennessee,) T T. Polcar (Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,)

Abstract

Nanoindentation is widely used to evaluate the mechanical properties of irradiated materials; however, its potential for quantifying irradiation-induced subsurface strain remains underexplored. In this work, an integrated experimental–numerical framework based on a physics-constrained inverse modeling approach is employed to estimate the magnitude of a depth-dependent irradiation-induced strain distribution in single-crystal 4H-SiC following sequential He and H ion implantation. The approach combines depth-sensing nanoindentation, finite element modeling (FEM), and a simplex-based inverse optimization routine to calibrate a physically motivated eigenstrain profile derived from ion-damage simulations. The strain field is assumed to follow a lognormal distribution consistent with independently determined damage profiles (stopping and range of ions in matter) and is implemented in the FEM model through a depth-dependent thermal expansion formulation. By minimizing the squared error between simulated and experimental force–displacement curves, the peak tensile strain is estimated to be ∼0.91%, accompanied by an effective Young's modulus of 310 GPa and a yield strength of 16.4 GPa. Independent validation by nano-beam precession electron diffraction confirms good agreement between the reconstructed and experimentally measured out-of-plane strain profiles in both magnitude and spatial distribution. The results demonstrate that nanoindentation, when combined with physics-based inverse modeling, can provide a practical tool for quantifying irradiation-induced strain and residual stress in nuclear ceramics. This methodology offers a complementary approach to diffraction-based techniques for assessing subsurface damage in ion-irradiated materials relevant to advanced nuclear systems.

Article Details

Volume / Issue Vol. 140, Issue 5
Published August 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (11)

M

M. Bensalem

Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,

N

N. Daghbouj

Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,

J

J. Duchoň

Institute of Physics of the Czech Academy of Sciences 2 , Na Slovance 1999/2, Prague 8 182 21,

B

B. S. Li

State Key Laboratory for Environment-friendly Energy Materials, Southwest University and Technology 3 , Mianyang 621010, Sichuan,

A

A. T. AlMotasem

Department of Physics, Faculty of Science, Assiut University 1 , Assiut 71516,

S

S. Magalhães

IPFN, Instituto Superior Técnico, Universidade de Lisboa 4 , Estrada Nacional 10, Bobadela LRS 2695-066,

A

A. Yi

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 5 , Shanghai 200050,

F

F. Munnik

Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research 6 , Bautzner Landstr. 400, Dresden 01328,

X

Xin Ou

W

W. J. Weber

Department of Materials Science and Engineering, University of Tennessee 7 , Knoxville 37996, Tennessee,

T

T. Polcar

Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague 1 , Technická 2, Prague 6 160 00,