Phonon transport in Al-rich AlxGa1−xN thin films

K Kyuhwe Kang (Department of Mechanical Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,) A Abhishek Pathak Y Yiwen Song (State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics) H Husam Walwil (Department of Mechanical Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,) T Timothy Mirabito (Department of Materials Science and Engineering, The Pennsylvania State University, 3 University Park, Pennsylvania 16802,) N Nathaniel S. McIlwaine (Department of Materials Science and Engineering, The Pennsylvania State University, 3 University Park, Pennsylvania 16802,) M Mihee Ji (DEVCOM Army Research Laboratory 4 , Adelphi, Maryland 20783,) L LeighAnn S. Larkin (DEVCOM Army Research Laboratory 4 , Adelphi, Maryland 20783,) C Christopher B. Saltonstall (Sandia National Laboratories 5 , Albuquerque, New Mexico 87123,) A Andrew A. Allerman (Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,) J Jon-Paul Maria J Joan M. Redwing J Jonathan A. Malen (Department of Mechanical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213,) A Alan J. H. McGaughey (Department of Mechanical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213,) S Sukwon Choi (Department of Mechanical Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,)

Abstract

AlxGa1−xN with a high Al composition (x) presents significant potential for advancing next-generation high-power electronic devices. To support the thermal design of AlxGa1−xN-based electronics, the thermal conductivity of AlxGa1−xN thin films was measured as a function of Al composition, temperature, and film thickness using time-domain thermoreflectance and frequency-domain thermoreflectance techniques. The measurement results were interpreted by modeling phonon transport in AlxGa1−xN films using the phonon Boltzmann transport equation. Phonon properties, including frequencies, group velocities, and lifetimes, were calculated using a virtual crystal approximation, with the effects of mass-disorder scattering incorporated via the Tamura model. The measured thermal conductivity of Al0.7Ga0.3N is an order of magnitude lower than those for GaN and AlN, exhibits an increase followed by saturation with temperature, and shows a modest decrease with a reduction in the film thickness. The modeling results agree with the measurement results and reveal that mass-disorder scattering and phonon-boundary scattering are the dominant mechanisms that reduce the thermal conductivity of AlxGa1−xN thin films.

Article Details

Volume / Issue Vol. 138, Issue 8
Published August 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (15)

K

Kyuhwe Kang

Department of Mechanical Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,

A

Abhishek Pathak

Y

Yiwen Song

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics

H

Husam Walwil

Department of Mechanical Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,

T

Timothy Mirabito

Department of Materials Science and Engineering, The Pennsylvania State University, 3 University Park, Pennsylvania 16802,

N

Nathaniel S. McIlwaine

Department of Materials Science and Engineering, The Pennsylvania State University, 3 University Park, Pennsylvania 16802,

M

Mihee Ji

DEVCOM Army Research Laboratory 4 , Adelphi, Maryland 20783,

L

LeighAnn S. Larkin

DEVCOM Army Research Laboratory 4 , Adelphi, Maryland 20783,

C

Christopher B. Saltonstall

Sandia National Laboratories 5 , Albuquerque, New Mexico 87123,

A

Andrew A. Allerman

Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,

J

Jon-Paul Maria

J

Joan M. Redwing

J

Jonathan A. Malen

Department of Mechanical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213,

A

Alan J. H. McGaughey

Department of Mechanical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213,

S

Sukwon Choi

Department of Mechanical Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,