Phase transitions and relaxor behavior of lead-free ferroelectric bismuth potassium titanate
Abstract
The phase transition behavior of relaxor ferroelectric Bi1/2K1/2TiO3 (BKT) is investigated in ceramic form based on synchrotron radiation x-ray diffraction (SR-XRD) measurements and dielectric measurements as a function of temperature. The BKT ceramics show a spontaneous phase transition from the non-ergodic relaxor (NER) phase to the ferroelectric phase characterized by an abrupt change in relative permittivity around 310 °C. Analyses of the temperature dependence of dielectric properties reveal that, upon cooling from the high-temperature paraelectric phase, a phase transition to the ergodic relaxor phase associated with the formation of polar nanoregions (PNRs) occurs at the Burns temperature (TB) of 584 °C, and the PNRs are frozen at the freezing temperature (Tf) of 364 °C. SR-XRD measurements for the BKT powders show that the crystal structure transforms from the cubic (Pm3¯m) to the tetragonal (P4mm) in the temperature range of 327–347 °C, which is slightly higher than the temperature of the spontaneous relaxor-to-ferroelectric phase transition. These results indicate that the structural transformation from the cubic NER state to the tetragonal NER state may trigger the spontaneous relaxor-to-ferroelectric phase transition. Based on these experimental observations, a temperature phase diagram of BKT is established in terms of average crystal structure and polar order.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (5)
Kotaro Saito
Department of Computer Science and Electrical Engineering, Graduate School of Science and Technology, Kumamoto University 1 , 2-39-1, Kurokami, Chuo-ku, Kumamoto 860-8555,
Hiroki Matsuo
International Research Organization for Advanced Science and Technology (IROAST), Kumamoto University 2 , 2-39-1, Kurokami, Chuo-ku, Kumamoto 860-8555,
Yasuhiro Yoneda
Japan Atomic Energy Agency (JAEA) 5 , Sayo-gun, Hyogo 679-5148,
Zuo-Guang Ye
Yuji Noguchi
Research and Education Institute for Semiconductors and Informatics (REISI), Kumamoto University 4 , 2-39-1, Kurokami, Chuo-ku, Kumamoto 860-8555,