Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

Abstract

Abstract This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio ( I ON / I OFF ) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain ( A V ), transconductance generation factor (TGF), and cut-off frequency ( f T ), are examined. The results demonstrate notable enhancements: transconductance ( g m ) increases by 98.3%, TGF by 73.7%, and A V by 72.66%. However, a 9.85% reduction in f T is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.