Performance evaluation of Cu2SrSnS4 based solar cell: effect of transition metal dichalcogenides buffer layer

Abstract

Abstract The urgent demand for efficient renewable energy technologies has driven extensive research into quaternary chalcogenide materials, owing to their outstanding photovoltaic properties and potential for high performance. This study focuses on the design, performance optimization, and comparative analysis of Cu2SrSnS4-based solar cells, with particular emphasis on employing different transition metal dichalcogenide (TMD) buffer layers, specifically MoS2 and WS2. By utilizing SCAPS 1-D simulation software, the research systematically examines the impact of critical parameters such as buffer layer thickness, doping concentrations, and operating temperatures on the solar cell’s efficiency and stability. The simulation results demonstrate that the ZnO/MoS2/Cu2SrSnS4 configuration attained the highest efficiency, reaching an impressive 35.6%, significantly surpassing its counterpart with WS2 as the buffer layer, which achieved an efficiency of 29.1%. The findings demonstrate the significance of buffer layer selection and parameter optimization in maximizing the potential of Cu2SrSnS4 solar cells. Ultimately, this research offers valuable insights into the development of high-efficiency, stable photovoltaic technologies, advancing the future of next-generation quaternary chalcogenide solar cells.