Oscillatory Strong Metal‐Support Interaction in Pd/TiO <sub>2</sub> Under Redox Conditions

Y Yuhui Chen (State Key Laboratory of Silicon and Advanced Semiconductor Materials and Center of Electron Microscopy, School of Materials Science and Engineering) J Jinting Hao (Center of Electron Microscopy and State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China) K Kai Zhang S Songda Li (Center of Electron Microscopy and State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) Z Zhongkang Han (State Key Laboratory of Silicon and Advanced Semiconductor Materials and Center of Electron Microscopy, School of Materials Science and Engineering) W Wentao Yuan (Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering) Y Ying Jiang Z Ze Zhang (Department of Polymer Science and Engineering) Y Yong Wang

Abstract

Abstract Strong metal‐support interaction (SMSI) plays a crucial role in catalysis, with its encapsulation configuration being highly dependent on the chemical environments. However, the dynamic behavior of SMSI under redox conditions remains insufficiently understood. Here, environmental transmission electron microscopy (ETEM) revealed that SMSI overlayers form stably on the surface of Pd/TiO 2 nanocatalysts under pure O 2 and pure H 2 conditions, and exhibit oscillatory behavior under a redox condition with a 5:1 O 2 /H 2 ratio at 0.05 Pa. Specifically, the outer layer of the SMSI overlayer, characterized primarily by typical oxidative SMSI, undergoes oscillations between formation and retraction near the Pd‐TiO 2 interface. The SMSI oscillations locally modify the morphology of the TiO 2 support, with the SMSI overlayer serving as a temporary reservoir for Ti species to drive the tip growth of the support protrusion. Our work expands the understanding of the dynamic behavior of SMSI under reaction conditions and provides new insights into the solid‐state growth mechanism.

Article Details

Volume / Issue Vol. 64, Issue 27
Published July 01, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (9)

Y

Yuhui Chen

State Key Laboratory of Silicon and Advanced Semiconductor Materials and Center of Electron Microscopy, School of Materials Science and Engineering

J

Jinting Hao

Center of Electron Microscopy and State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China

K

Kai Zhang

S

Songda Li

Center of Electron Microscopy and State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

Z

Zhongkang Han

State Key Laboratory of Silicon and Advanced Semiconductor Materials and Center of Electron Microscopy, School of Materials Science and Engineering

W

Wentao Yuan

Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering

Y

Ying Jiang

Z

Ze Zhang

Department of Polymer Science and Engineering

Y

Yong Wang