Oriented Molecular Dipole‐Enabled Modulation of NiO<i><sub>x</sub></i>/Perovskite Interface for Pb‐Sn Mixed Inorganic Perovskite Solar Cells

W Weihai Zhang (School of New Energy Ningbo University of Technology Ningbo 315336 China) H Heng Liu T Tengcheng Huang (Department of Physics, College of Physics & Optoelectronic Engineering, Jinan University 1 , Guangzhou 510632,) L Lirui Kang (School of New Energy Ningbo University of Technology Ningbo 315336 China) J Junhan Ge (School of New Energy Ningbo University of Technology Ningbo 315336 China) H Hui Li X Xia Zhou W Wenjun Zhang T Tingting Shi H Hsing‐Lin Wang (Department of Materials Science and Engineering Key University Laboratory of Highly Efficient Utilization of Solar Energy and Sustainable Development of Guangdong Southern University of Science and Technology Shenzhen 518055 China)

Abstract

AbstractNickel oxide (NiOx) is considered as a potential hole transport material in the fabrication of lead‐tin (Pb‐Sn) perovskite solar cells (PSCs) for tandem applications. However, the energy level mismatch and unfavorable redox reactions between Ni≥3+ species and Sn2+ at the NiOx/perovskite interface pose challenges. Herein, high‐performance Pb‐Sn‐based inorganic PSCs are demonstrated by modulating the NiOx/perovskite interface with a multifunctional 4‐aminobenzenesulfonic acid (4‐ABSA) interlayer. The 4‐ABSA interlayer induces the formation of an oriented dipole moment directed from NiOx to perovskite, effectively elevating the valance band maximum of the NiOx film, thus balancing the energy level difference and promoting charge carrier extraction of the device. Moreover, the 4‐ABSA molecules interact with both NiOx and perovskite, suppressing the reaction of highly active Ni≥3+ species with perovskites while regulating perovskite crystallization. This results in perovskite films with reduced defect density and enlarged grains. Consequently, a remarkable device efficiency of 17.4% is obtained, representing the highest reported value for Pb‐Sn‐based inorganic PSCs thus far. Furthermore, the 4‐ABSA interlayer enhances the UV‐radiation and operational stability of the resulting devices, maintaining over 80% and 90% of the initial efficiency after 240 h of UV‐light exposure and 480 h of 1 sun illumination, respectively.

Article Details

Volume / Issue Vol. 37, Issue 8
Published February 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

W

Weihai Zhang

School of New Energy Ningbo University of Technology Ningbo 315336 China

H

Heng Liu

T

Tengcheng Huang

Department of Physics, College of Physics & Optoelectronic Engineering, Jinan University 1 , Guangzhou 510632,

L

Lirui Kang

School of New Energy Ningbo University of Technology Ningbo 315336 China

J

Junhan Ge

School of New Energy Ningbo University of Technology Ningbo 315336 China

H

Hui Li

X

Xia Zhou

W

Wenjun Zhang

T

Tingting Shi

H

Hsing‐Lin Wang

Department of Materials Science and Engineering Key University Laboratory of Highly Efficient Utilization of Solar Energy and Sustainable Development of Guangdong Southern University of Science and Technology Shenzhen 518055 China