Optimization of chemical texturing time for enhanced optical and electrical performance of Boron-Doped silicon solar wafers

Abstract

Abstract Surface texturing is a crucial step in enhancing the light-trapping efficiency of silicon solar cells by reducing optical reflection. The etching time plays a key role in determining the morphology and effectiveness of the textured surface. This study investigates the impact of chemical texturing duration on the structural, optical, and electrical properties of p-type boron-doped silicon wafers for solar cell applications. Texturing was performed using a mixture of potassium hydroxide and isopropyl alcohol (KOH-IPA) solution for varying durations (5–25 min). Structural, optical and electrical analysis revealed optimal pyramid formation at 20 min, coinciding with the lowest reflectivity and the lowest energy gap E g (1.77 eV) and Urbach energy E u indicating the most efficient absorption and reduced structural disorders. Also, conduction behavior transitions from DC-dominated at low frequencies to AC-dominated at higher frequencies, in agreement with the correlated barrier hopping (CBH) model. Maximum conductivity and dielectric loss were also observed in the 20-min etched sample and attributed to improved morphology and charge transport. These findings highlight 20 min as the optimal etching duration for enhancing photovoltaic efficiency by balancing light absorption and charge carrier dynamics.