Optical exciton features in structurally diverse phenyl group-based inorganic–organic hybrid semiconductors

M Mohammad Adnan (Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,) K Kshetra Mohan Dehury (Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,) A Albin Kuriakose (Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,) G G. Vijaya Prakash (Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,)

Abstract

A novel series of inorganic–organic (IO) hybrid semiconductors with varying crystal dimensions and structural reorganizations, arising from the unusual conformation of organic ammonium cation (R–NH3)+ within the MX6 inorganic octahedral networks, are investigated. Here, we report the systematic investigations of exciton behavior in a new IO hybrid series resulted out of phenyl group-based R = (C6H5–(CH2)n–NH3)+ (n = 1–4) organic moieties interactions with inorganic lead iodide (PbI2). The resultant IO hybrid semiconductors of n = 1 and n = 2 show an infinitely extended corner-sharing PbI6 octahedral 2D network, resembling natural multiple quantum wells, whereas the rest show staggered with edge sharing layered networks. Consequently, these hybrids demonstrate strong room-temperature Mott-type excitons having structural dependency. One-photon (1PA, ħω ≥ Eg) and two-photon (2PA, 2ħω ≥ Eg) absorption-induced photoluminescence (PL) studies highlight the presence of different types of excitons associated with variations in their bandgaps. The comprehensive analysis of transient absorption studies and PL spectral mapping reveal many important features of exciton behavior, specifically about their structural dependency, excited-state charge carrier dynamics, and relaxation pathways.

Article Details

Volume / Issue Vol. 137, Issue 20
Published May 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (4)

M

Mohammad Adnan

Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,

K

Kshetra Mohan Dehury

Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,

A

Albin Kuriakose

Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,

G

G. Vijaya Prakash

Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi 1 , Hauz Khas, New Delhi 110016,