Optical characterization of heavy-ion induced damage in 4H-SiC
Abstract
The interaction between silicon carbide and heavy ions is governed by both the material properties of SiC and the characteristics of the heavy ions. Relevant heavy-ion parameters include the total stopping power (S), its components, electronic stopping power (Se) and nuclear stopping power (Sn), the linear energy transfer, and the ion energy, while irradiation conditions are characterized by the fluence. This study examines how the parameters of the incoming ions influence the total number of silicon vacancies (VSi) generated, the damage to the crystal structure, and, consequentially, the induced strain. Heavy-ion–induced damage was characterized using photoluminescence spectroscopy and Raman spectroscopy. The results indicate that increasing S at the surface increases VSi concentration, reduces crystallinity, and introduces broad Raman features, whereas low S values at the surface can improve the crystalline quality. The strain induced by heavy ions exhibits distinct S-dependent trends depending on Sn and the fluence. These findings advance the understanding of SiC–heavy-ion interactions by clarifying the impact of S and fluence on VSi formation and crystal damage.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (12)
H. Goncalves de Medeiros
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,
G. Felaco
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,
C. Martinella
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,
S. S. Faria
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,
M. Belanche Guadas
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,
A. C. Ulibarri
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,
S. Peracchi
Australian Nuclear Science and Technology Organization (ANSTO) 4 , New Illawarra Road, Lucas Heights, NSW 2234,
R. Drury
Australian Nuclear Science and Technology Organization (ANSTO) 4 , New Illawarra Road, Lucas Heights, NSW 2234,
Z. Pastuovic
Australian Nuclear Science and Technology Organization (ANSTO) 4 , New Illawarra Road, Lucas Heights, NSW 2234,
J. Reuteler
Scientific Center for Optical and Electron Microscopy (ScopeM), Eidgenössische Technische Hochschule Zürich 5 , Zurich,
R. Di Capua
Dipartimento di Fisica “E. Pancini,” Università degli Studi di Napoli Federico II 6 , Naples,
U. Grossner
Advanced Power Semiconductor Laboratory, Eidgenössische Technische Hochschule Zürich 1 , Physikstrasse 3, 8092 Zurich,