On‐Chip Active Supercoupled Topological Cavity

R Ridong Jia (Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore) W Wenhao Wang Y Yi Ji Tan (Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore) Z Zhonglei Shen (Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore Singapore) T Thomas CaiWei Tan Z Zhonghua Gu (Institute of Microelectronics Agency for Science, Technology and Research Singapore 138634 Singapore) P Prakash Pitchappa (Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR) 4 , 2 Fusionopolis Way, Innovis #08-02, Singapore 138634,) R Ranjan Singh

Abstract

Abstract On‐chip photonic resonant cavity plays a critical role in widespread applications including lasing, sensing, and spectroscopy. However, the excitation of these cavities typically relies on evanescent coupling within sub‐wavelength distances, limiting flexible and precise chip integration. Here, an on‐chip supercoupled topological cavity is demonstrated which is critically coupled at 2.3‐wavelength distance from a bus waveguide and remains excited even at 3.2 wavelengths, based on the supercoupling mechanism enabled by the valley vortex flow. Optothermal heating facilitates tunable quality factors and dynamic control of the supercoupling condition, allowing transitions from overcoupling to undercoupling through the critical point. The discovery extends the waveguide‐cavity excitation distance to multiple wavelengths, unlocking new possibilities for designing and controlling on‐chip resonant devices, including supercoupled lasers, sensors, and modulators.

Article Details

Volume / Issue Vol. 37, Issue 24
Published June 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

R

Ridong Jia

Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore

W

Wenhao Wang

Y

Yi Ji Tan

Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore

Z

Zhonglei Shen

Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore Singapore

T

Thomas CaiWei Tan

Z

Zhonghua Gu

Institute of Microelectronics Agency for Science, Technology and Research Singapore 138634 Singapore

P

Prakash Pitchappa

Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR) 4 , 2 Fusionopolis Way, Innovis #08-02, Singapore 138634,

R

Ranjan Singh