Octahedral Twisting‐Mediated van der Waals Stacking Induces Ultralow Thermal Conductivity

N Ni Ma (Hefei National Research Center for Physical Sciences at the Microscale) K Kai Li L Liang Sun R Rongjie He (Tsinghua SIGS, Tsinghua University 1 , Shenzhen 518055,) J Jiating Xia (Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei Anhui 230026 P. R. China) S Shiming Zhou (Hefei National Research Center for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics of Chinese Academy of Sciences, National Synchrotron Radiation Laboratory, Key Laboratory of Surface and Interface Chemistry and Energy Catalysis of Anhui Higher Education Institutes, Department of Chemical Physics) C Changzheng Wu (State Key Laboratory of Precision and Intelligent Chemistry, School of Chemistry and Materials Science) B Bo Sun C Chong Xiao (Hefei National Research Center for Physical Sciences at the Microscale) Y Yi Xie

Abstract

Abstract Low thermal conductivity ( κ ) is an important physical parameter inherent to all solids, and the quest for intrinsic ultralow‐ κ solids is one of the key scientific issues. Material design based on functional units can achieve control over lattice and phonon dynamics, and it is proposed that asymmetric structural units‐mediated van der Waals stacking can collectively lead to the low thermal conductivity. Herein, a novel van der Waals material In 2 G 2 Se₆ is reported, in which the distorted InSe₆ octahedron forms monolayers in conjunction with Ge 2 Se₆ dimers, which are further stacked along the c ‐axis via weak metavalent bonding. The distorted octahedron and van der Waals stacking result in large anharmonicity and ultrasoft acoustic phonon along Γ – Z direction, respectively. Consequently, In 2 Ge 2 Se 6 exhibits ultralow out‐of‐plane thermal conductivity, κ out‐of‐plane ≈0.2 W m −1 K −1 at 600 K. This study establishes a model for phonon physics that simultaneously enhances phonon‐phonon scattering and lowers the phonon group velocity, revealing the great potential of functional‐unit‐based material design for low‐ κ solids.

Article Details

Volume / Issue Vol. 38, Issue 2
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

N

Ni Ma

Hefei National Research Center for Physical Sciences at the Microscale

K

Kai Li

L

Liang Sun

R

Rongjie He

Tsinghua SIGS, Tsinghua University 1 , Shenzhen 518055,

J

Jiating Xia

Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei Anhui 230026 P. R. China

S

Shiming Zhou

Hefei National Research Center for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics of Chinese Academy of Sciences, National Synchrotron Radiation Laboratory, Key Laboratory of Surface and Interface Chemistry and Energy Catalysis of Anhui Higher Education Institutes, Department of Chemical Physics

C

Changzheng Wu

State Key Laboratory of Precision and Intelligent Chemistry, School of Chemistry and Materials Science

B

Bo Sun

C

Chong Xiao

Hefei National Research Center for Physical Sciences at the Microscale

Y

Yi Xie