Observation of Néel‐Skyrmions in Bilayered Oxide Ferroelectrics

F Feng‐Hui Gong (Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China) S Shuai‐Shuai Yin (Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China) K Kefan Liu (State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310058 China) Y Yun‐Long Tang (Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) Y Yin‐Lian Zhu (Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China) Y Yu‐Ting Chen (Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China) Y Yu‐Jia Wang (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) X Xiao‐Long Li (Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China) X Xue‐Rong Liu (School of Physical Science and Technology ShanghaiTech University Shanghai China) Z Zijian Hong X Xiu‐Liang Ma (Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China)

Abstract

Abstract Skyrmions in ferromagnetic materials exhibit either Néel or Bloch characteristics. Although skyrmions in ferromagnetic materials can be readily obtained via inter‐spin interactions, a skyrmion in ferroelectric materials exhibiting solely Néel or Bloch characteristics has not yet been discovered. Here, by modulating the formation of skyrmion‐bubbles in [(PbTiO 3 ) n /(SrTiO 3 ) n ] 1 [(PTO n /STO n ) 1 ] bilayers grown on STO substrates, the atomic morphology of pure Néel‐skyrmion is observed with a topological charge of ± 1 in the ultrathin bilayered films with the thickness of 2 unit cells (u.c.). Such a pure Néel‐skyrmion is confirmed by a combination of atomic mappings, geometric phase analysis, and X‐ray 3D reciprocal space mapping (RSM). It is found that decreasing the thickness of bilayered films from 50 to 2 u.c., the characteristics of skyrmion‐bubbles exhibiting both Néel and Bloch features disappear along with the Bloch features. The formation mechanism of the Néel‐skyrmions is unveiled using Phase‐field simulations, showing the critical role of electric and gradient energy variation in the stable phase of Néel‐skyrmions. These nanoscale pure Néel‐skyrmions represent the electrical equivalents of their magnetic counterparts, extending the size limits of topological phases and offering potential advancements in the field of ferroelectric physics.

Article Details

Volume / Issue Vol. 37, Issue 34
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

F

Feng‐Hui Gong

Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China

S

Shuai‐Shuai Yin

Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

K

Kefan Liu

State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310058 China

Y

Yun‐Long Tang

Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

Y

Yin‐Lian Zhu

Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China

Y

Yu‐Ting Chen

Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China

Y

Yu‐Jia Wang

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

X

Xiao‐Long Li

Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

X

Xue‐Rong Liu

School of Physical Science and Technology ShanghaiTech University Shanghai China

Z

Zijian Hong

X

Xiu‐Liang Ma

Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China