Novel strategy for improving anisotropic critical current density of YBa2Cu3O <i>y</i> films through <i>ab</i> -plane oriented columnar defects

T Tetsuro Sueyoshi (Faculty of Science and Engineering, Kyushu Sangyo University 1 , 2-3-1 Matsukadai Higashi-ku, Fukuoka 813-8503,) Y Yasuya Iwanaga (Faculty of Engineering, Kumamoto University 2 , 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555,) S Satoshi Semboshi (Faculty of Materials for Energy, Shimane University 3 , 1060 Nishikawatsu-cho, Matsue, Shimane 690-8504,) T Toshinori Ozaki (School of Engineering, Kwansei Gakuin University 4 , 1 Gakuen Uegahara, Sanda 669-1330,) H Hitoshi Sakane (SHI-ATEX Co. Ltd. 5 , 1501 Imazaike, Saijyo, Ehime 799-1393,) T Terukazu Nishizaki (Faculty of Science and Engineering, Kyushu Sangyo University 1 , 2-3-1 Matsukadai Higashi-ku, Fukuoka 813-8503,) N Norito Ishikawa (Japan Atomic Energy Agency 4 , Tokai 319-1195,)

Abstract

We investigated the vortex pinning behaviors around the magnetic field B parallel to the ab-plane in YBa2Cu3Oy thin films with novel, ab-plane oriented columnar defects (CDs), which were successfully introduced using 200 MeV Xe ion irradiation at large angles θi = 75° − 85° from the c-axis. Critical current density Jc at B || ab was significantly enhanced when two families of inclined CDs crossed at θi = ±85°. Moreover, the crossed CDs at θi = ±85° significantly changed the drop in the exponent n of the electric field vs the current density curve (E ∝ Jn) into a broad peak for B || ab at lower temperatures. Critical scaling analyses of the transport properties indicated that the vortex glass phase formed by random pinning was dominant at B || ab, even in the presence of crossed CDs at θi = ±85°. These results are the first to demonstrate that the mechanism of the slay effect at B || ab differs from that at B || c: the crossed CDs do not induce the vortex entanglement at B || ab but do enhance Jc through the suppression of thermally activated motion of staircase vortices.

Article Details

Volume / Issue Vol. 138, Issue 11
Published September 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

T

Tetsuro Sueyoshi

Faculty of Science and Engineering, Kyushu Sangyo University 1 , 2-3-1 Matsukadai Higashi-ku, Fukuoka 813-8503,

Y

Yasuya Iwanaga

Faculty of Engineering, Kumamoto University 2 , 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555,

S

Satoshi Semboshi

Faculty of Materials for Energy, Shimane University 3 , 1060 Nishikawatsu-cho, Matsue, Shimane 690-8504,

T

Toshinori Ozaki

School of Engineering, Kwansei Gakuin University 4 , 1 Gakuen Uegahara, Sanda 669-1330,

H

Hitoshi Sakane

SHI-ATEX Co. Ltd. 5 , 1501 Imazaike, Saijyo, Ehime 799-1393,

T

Terukazu Nishizaki

Faculty of Science and Engineering, Kyushu Sangyo University 1 , 2-3-1 Matsukadai Higashi-ku, Fukuoka 813-8503,

N

Norito Ishikawa

Japan Atomic Energy Agency 4 , Tokai 319-1195,