Non‐Fused Conjugated Alkylfluorene Bridged Naphthalimides Cathode Interlayer Enables Low‐Noise Near‐Infrared Organic Photodiodes

Y Yueyue Wang (National Power Battery Innovation Center) M Minming Yan (GuangDong Engineering Technology Research Center of Multi‐Dimensional Optoelectronic Materials, Shenzhen Graduate School Peking University Shenzhen 518055 P.R. China) S Shunyu Wang D Danni Chen Q Qilin Zhang Y Yi Su (Collaborative Innovation Center of Advanced Nuclear Energy Technology Institute of Nuclear and New Energy Technology Tsinghua University Beijing P.R. China) D Dongwen Zou (GuangDong Engineering Technology Research Center of Multi‐Dimensional Optoelectronic Materials, Shenzhen Graduate School Peking University Shenzhen 518055 P.R. China) M Meili Xu (GuangDong Engineering Technology Research Center of Multi‐Dimensional Optoelectronic Materials, Shenzhen Graduate School Peking University Shenzhen 518055 P.R. China) H Hong Chen (State Key Laboratory of Polymer Science and Technology, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, No.5625, Renmin Street, Changchun, Jilin 130022, P. R. China) H Hong Meng (School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China)

Abstract

AbstractThe cathode interface layers (CILs) play a crucial role in enhancing the performance of organic photodiodes (OPDs). However, the poor film formation, the tendency of orientation and aggregation, and contact in the interface of the bulk heterojunction (BHJ)/CILs/electrode increase the dark current, leading to a limitation of light detection. In this study, we designed and synthesized a nonfused conjugated small molecule (FNA) with dioctyl fluorene (F) as the π‐bridge and N‐dimethylaminopropyl‐1,8‐naphthalimide (NA) as terminal groups. As the CIL, it significantly modifies the interfaces of BHJ/CILs/electrode and minimizes dark current density (Jd). Using PTB7‐Th:IEICO‐4F as the BHJ, FNA‐based OPDs achieve a remarkably low Jd of 1.12 × 10−8 A cm−2 (at −0.5 V) and a peak specific detectivity of 8.23 × 1012 Jones (940 nm), outperforming conventional devices with PDINN as CIL. These improvements are attributed to lower Jd by modified interfacial contact and increased photoresponse by reducing depletion region width in FNA‐based photodiodes. Furthermore, uniform photoresponse in 5 × 5 OPD pixel arrays further validates its potential for imaging applications.

Article Details

Volume / Issue Vol. 64, Issue 41
Published October 06, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (10)

Y

Yueyue Wang

National Power Battery Innovation Center

M

Minming Yan

GuangDong Engineering Technology Research Center of Multi‐Dimensional Optoelectronic Materials, Shenzhen Graduate School Peking University Shenzhen 518055 P.R. China

S

Shunyu Wang

D

Danni Chen

Q

Qilin Zhang

Y

Yi Su

Collaborative Innovation Center of Advanced Nuclear Energy Technology Institute of Nuclear and New Energy Technology Tsinghua University Beijing P.R. China

D

Dongwen Zou

GuangDong Engineering Technology Research Center of Multi‐Dimensional Optoelectronic Materials, Shenzhen Graduate School Peking University Shenzhen 518055 P.R. China

M

Meili Xu

GuangDong Engineering Technology Research Center of Multi‐Dimensional Optoelectronic Materials, Shenzhen Graduate School Peking University Shenzhen 518055 P.R. China

H

Hong Chen

State Key Laboratory of Polymer Science and Technology, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, No.5625, Renmin Street, Changchun, Jilin 130022, P. R. China

H

Hong Meng

School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China