Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

D Do Hoon Kim S Seoeun Jang (Graduate School of Semiconductor Technology KAIST Daejeon Republic of Korea) H Hakseung Rhee M Min Gu Lee D Daehee Kim (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) T Taewook Go (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) W Woon Hyung Cheong H Hanchan Song K Kyung Min Kim

Abstract

ABSTRACT Memristors exhibit tunable resistance, which has been widely exploited in non‐volatile memory, in‐memory computing, and neuromorphic computing. They can also serve as an entropy source due to their inherent instability, making them attractive for security devices and probabilistic computing. When these two characteristics are coupled, memristors can act as tunable entropy sources; however, this direction remains largely unexplored. Here, we propose a spiking‐rate‐programmable probabilistic neuron that leverages the tunable noise characteristics of a Ru/TaO x /Pt memristor. In this memristor, the conduction mechanism varies across resistance states, leading to distinct noise behaviors and signal‐to‐noise ratios that depend on the programmed resistance. This noise can be harnessed to realize frequency‐selective, frequency‐domain probabilistic neural encoding. By integrating these probabilistic neurons, an identical network architecture can process input signals spanning a wide frequency range, achieving around 95% classification performance on both low‐frequency human activity data (UCI HAR, 0.4–25 Hz) and high‐frequency speech data (Audio MNIST, 20 Hz–8 kHz). These results highlight a new direction that leverages the intrinsic properties of memristors for compact, adaptive, and energy‐efficient time‐series encoding.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 05, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

D

Do Hoon Kim

S

Seoeun Jang

Graduate School of Semiconductor Technology KAIST Daejeon Republic of Korea

H

Hakseung Rhee

M

Min Gu Lee

D

Daehee Kim

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

T

Taewook Go

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

W

Woon Hyung Cheong

H

Hanchan Song

K

Kyung Min Kim