Nitrogen-driven ferromagnetism and perpendicular magnetic anisotropy in two-dimensional transition-metal nitrides
Abstract
Data-centric technologies demand energy-efficient, densely integrable spintronic building blocks, motivating the search for two-dimensional (2D) ferromagnets combining room-temperature Curie temperatures (TC) and perpendicular magnetic anisotropy (PMA). Compared with halides and chalcogenides, transition-metal nitrides (TMN2) feature short metal–nitrogen bonds and strong p-d hybridization, which can substantially reshape crystal-field splitting and magnetic exchange pathways. Through systematic first-principles screening of hexagonal h-TMN2 (TM = 3,4,5d) monolayers, we identify h-VN2 and h-CrN2 as the only stable candidates exhibiting intrinsic PMA and half-metallicity with sizable spin-flip gaps (Δsf = 0.27 eV for h-VN2 and 0.25 eV for h-CrN2). Phonon spectra and ab initio molecular dynamics simulations confirm their dynamical and thermal stability, with h-VN2 preserving crystalline integrity up to 800 K. Monte Carlo simulations confirm out-of-plane easy axes with TC values of ≈305 K for h-VN2 and ≈134 K for h-CrN2. Notably, h-VN2 exhibits pronounced magnetoelectric tunability: its half-metallicity and PMA are robustly preserved within a broad biaxial strain window (−2%–+3%), maintaining near-room-temperature TC. In bilayer configurations, vertical stacking further strengthens exchange interactions, enhancing TC to ∼477 K. Furthermore, h-VN2 sustains its ferromagnetism and PMA at both graphene and MoS2 interfaces, underscoring its compatibility with existing 2D platforms. These results highlight h-VN2 as a versatile platform where nitrogen-mediated exchange facilitates robust, high-temperature ferromagnetism for next-generation van der Waals spintronics.
Article Details
Journal Info
The Journal of Chemical Physics
American Institute of Physics
Authors (9)
Xianxing Li
College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University 1 , Guiyang City 550025,
Han Yan
Huasheng Sun
Qiong Peng
College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University 1 , Guiyang City 550025,
Junfei Ding
College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University 1 , Guiyang City 550025,
Nanjing Zheng
College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University 1 , Guiyang City 550025,
Xiaosi Qi
College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University 1 , Guiyang City 550025,
Jin Zhao
Xin Gao