Near‐Infrared Optoelectronic Memristor with All‐Optical Modulation for Microscopic Biological Motion Recognition

J Jiaqi Han (Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Republic of Singapore) H Hongchen Mao (Key Laboratory for UV Light‐Emitting Materials and Technology School of Physics Northeast Normal University 5268 Renmin Street Changchun 130024 P. R. China) Y Ya Lin (State Key Laboratory of Integrated Optoelectronics, Northeast Normal University , 5268 Renmin Street, Changchun 130024,) K Ke Peng (State Key Laboratory of Virology and Biosafety, Wuhan Institute of Virology, Center for Biosafety Mega-Science, Chinese Academy of Sciences) L Lingxin Meng (State Key Laboratory of Integrated Optoelectronics, School of Physics, Northeast Normal University 1 , 5268 Renmin Street, Changchun 130024,) Y Yadan Ding (Key Laboratory for UV Light‐Emitting Materials and Technology School of Physics Northeast Normal University 5268 Renmin Street Changchun 130024 P. R. China) X Xuanyu Shan (Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China) Y Ye Tao (State Key Laboratory of Radiation Medicine and Protection, School of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, Biomedical Basic Research Center (BBRC) of Jiangsu) J Jiajuan Shi Z Zhongqiang Wang (Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China) H Hancheng Zhu X Xiaoning Zhao H Haiyang Xu Y Yichun Liu

Abstract

Abstract Near‐infrared (NIR) synaptic devices are characterized by unique optical sensitivity and synaptic plasticity, possessing high potential to significantly broaden the visual spectrum accessible to humans. Moreover, these devices seamlessly integrate neuro‐morphological computing with infrared optical communication, attracting significant attention for future low‐power, high‐efficiency neuromorphic visual systems. However, the irreversible optical response of most optical synapses under short‐wavelength infrared light severely restricts the practical application of these devices. To overcome this limitation, this work proposes a NIR optoelectronic memristor with all‐optical modulation based on ZnO‐upconversion nanoparticles (ZnO‐UCNPs) nanocomposite film. The proposed device exhibits bidirectional light response characteristics under 350 and 980 nm light stimulations. The memristive mechanism can be attributed to the photothermal effect of upconversion nanoparticles in the nanocomposite film in conjunction with optical excitation in ZnO. Due to the all‐optical plasticity, a series of logical functions with fault‐tolerance capability, including are demonstrated in the proposed synaptic device. In addition, by leveraging the tissue‐penetrating capability of NIR light, the proposed device can be used in microscopic biological motion detection tasks and edge detection functions. This work introduces a promising method for developing fully optically controlled memristors and advancing the field of neuromorphic vision.

Article Details

Volume / Issue Vol. 37, Issue 45
Published November 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

J

Jiaqi Han

Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Republic of Singapore

H

Hongchen Mao

Key Laboratory for UV Light‐Emitting Materials and Technology School of Physics Northeast Normal University 5268 Renmin Street Changchun 130024 P. R. China

Y

Ya Lin

State Key Laboratory of Integrated Optoelectronics, Northeast Normal University , 5268 Renmin Street, Changchun 130024,

K

Ke Peng

State Key Laboratory of Virology and Biosafety, Wuhan Institute of Virology, Center for Biosafety Mega-Science, Chinese Academy of Sciences

L

Lingxin Meng

State Key Laboratory of Integrated Optoelectronics, School of Physics, Northeast Normal University 1 , 5268 Renmin Street, Changchun 130024,

Y

Yadan Ding

Key Laboratory for UV Light‐Emitting Materials and Technology School of Physics Northeast Normal University 5268 Renmin Street Changchun 130024 P. R. China

X

Xuanyu Shan

Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China

Y

Ye Tao

State Key Laboratory of Radiation Medicine and Protection, School of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, Biomedical Basic Research Center (BBRC) of Jiangsu

J

Jiajuan Shi

Z

Zhongqiang Wang

Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China

H

Hancheng Zhu

X

Xiaoning Zhao

H

Haiyang Xu

Y

Yichun Liu