Nanolaminate Ferroelectric Transistor Enabling Wide‐Reservoir In Sensor Neuromorphic Vision

G Gwangmin An (Division of Electronics and Electrical Engineering Dongguk University Seoul Republic of Korea) S Seungjun Lee (Department of Electrical and Computer Engineering, University of Minnesota−Twin Cities) H Hyeonho Lee (Division of Electronics and Electrical Engineering Dongguk University Seoul Republic of Korea) G Gimun Kim (Division of Electronics and Electrical Engineering Dongguk University Seoul Republic of Korea) T Tae‐Hyeon Kim (Department of Semiconductor Engineering Seoul National University of Science and Technology Seoul Republic of Korea) H Heung Soo Kim (Department of Mechanical Robotics and Energy Engineering Dongguk University Seoul Republic of Korea) Y Yang Chai S Sungjun Kim

Abstract

ABSTRACT This work reports a hardware‐oriented hybrid reservoir computing (HRC) system based on a nanolaminate ferroelectric thin‐film transistor (FeTFT) that unifies volatile and nonvolatile functions in a single three‐terminal device. The HZO/HfO 2 /HZO gate stack modulates grain size and suppresses ferroelectric variability, enabling precise multilevel control and highly linear weight updates via the incremental step pulse with verify algorithm (ISPVA). Electrical input induces long‐term memory, while optical excitation yields short‐term memory, allowing dual‐mode operation. Light‐driven 4‐bit reservoirs operate at picoampere currents (∼10 pW/device) and emulate nociceptive neuron behavior. Combining three wavelength‐dependent reservoirs (405, 450, 532 nm) expands the feature space and improves classification accuracy. Using ISPVA‐linearized readout, the system achieves 93.1% and 85.1% accuracies on MNIST and Fashion‐MNIST, respectively exceeding prior FeTFT/memristor‐based RC systems. This approach establishes a scalable, energy‐efficient route toward multifunctional in‐sensor neuromorphic computing based on a unified ferroelectric platform.

Article Details

Volume / Issue Vol. 38, Issue 15
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

G

Gwangmin An

Division of Electronics and Electrical Engineering Dongguk University Seoul Republic of Korea

S

Seungjun Lee

Department of Electrical and Computer Engineering, University of Minnesota−Twin Cities

H

Hyeonho Lee

Division of Electronics and Electrical Engineering Dongguk University Seoul Republic of Korea

G

Gimun Kim

Division of Electronics and Electrical Engineering Dongguk University Seoul Republic of Korea

T

Tae‐Hyeon Kim

Department of Semiconductor Engineering Seoul National University of Science and Technology Seoul Republic of Korea

H

Heung Soo Kim

Department of Mechanical Robotics and Energy Engineering Dongguk University Seoul Republic of Korea

Y

Yang Chai

S

Sungjun Kim