Multi‐Terraced Stacking Engineering in Moiré Ferroelectric Superlattice
Abstract
Abstract Emergent moiré ferroelectricity, capable of realizing ferroelectricity down to the atomic scale, holds transformative promise for ultracompact electronics. However, directly visualizing the stacking‐engineered interfacial ferroelectric phase is inherently difficult due to the intricate domain network involving overlapping lattice structures and complex polarization evolution. Moreover, the topological nature of the network inherently restricts nonvolatile switching, posing a fundamental barrier to practical implementation. In this work, a controlled boundary confinement engineering is proposed to disrupt topological constraints and enable precise domain engineering in moiré superlattices. Utilizing scanning probe microscopy and spherical aberration‐corrected transmission electron microscopy, atomic‐resolution observation of the WSe 2 stacking configuration is achieved, including R‐ (sliding ferroelectricity), H‐stacking, and domain walls with broken C 3 symmetry, from a cross‐sectional perspective. Nonvolatile polarization switching is observed due to the elimination of nodes’ pinning effects and the freedom of domain wall motion. The findings clarify the relationship between atomic structure and polarization distribution in the moiré system, providing crucial insights for the design and manipulation of moiré ferroelectrics in functional devices.
Article Details
Authors (12)
Luqi Wei
Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
Yunzhe Zheng
Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, and Shanghai Key Laboratory of Green Chemistry and Chemical Processes, School of Chemistry and Molecular Engineering, East China Normal University 1 , Shanghai 200241,
Zhao Guan
Wenyi Tong
Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
Wencheng Fan
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electrical Engineering, East China Normal University 2 , Shanghai 200241,
Haowen Xu
Wei‐Hao Sun
Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
Yan Cheng
Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.
Bin‐Bin Chen
Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
Ping‐Hua Xiang
Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
Chun‐Gang Duan
Key Laboratory of Polar Materials and Devices (Ministry of Education) Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China
Ni Zhong