Multilevel capacitive switching in the Ni/Ga2O3/ZnO metal–insulator–semiconductor heterostructure memcapacitor

Abstract

Due to its low static power consumption, the memcapacitor has potential applications in the development of high-density neural network computing. Herein, the stable and uniform capacitive switching behaviors are demonstrated through thousands of voltage sweep cycles in the Ni/Ga2O3/ZnO metal–insulator–semiconductor heterostructure memcapacitor. Furthermore, these capacitive states remain stable at different read frequencies. Meanwhile, the multilevel capacitive states are obtained by controlling the amplitude of the applied voltage. This depletion capacitance switching mechanism can attribute to the depletion region width modulation of Ni/Ga2O3/ZnO heterojunction due to the migration of the oxygen ion or electron under the external electric field. This study provides new insights for the development of memcapacitive materials and devices.