Multi‐functional Phase‐Changeable Salt for Inverted Perovskite Solar Cells

P Peidong Chen Z Zeping Ou M Mingyang Gao C Can Wang M Mingyu Song (Peking university, Beijing, China, China) L Lei Liu Y Yi Pan (Department of Chemistry, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong 999077, China) Q Qin Gao Z Zhiping Liu (State Key Laboratory of Advanced Materials for Intelligent Sensing, Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science) W Wei Wan (MOE Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Department of Chemistry) J Junjie Zhang J Jiahui Shen (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) Q Qiangwei Wang (Multi‐disciplinary Research Division Institute of High Energy Physics Chinese Academy of Sciences Beijing China) Z Zeyun Xiao (Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences) N Nabonswende Aida Nadege Ouedraogo Y Yu Chen T Tingming Jiang R Rui Wang H Haoxuan Guo K Kuan Sun

Abstract

ABSTRACT Non‐radiative recombination and uncontrolled crystallization at the buried perovskite interface remain key barriers to achieving highly efficient and stable perovskite solar cells (PSCs). Herein, we introduce a multi‐functional phase‐changeable salt, 2‐(diphenylphosphino)ethanaminium tetrafluoroborate (DPPEABF 4 ), as a functional interfacial modulator. DPPEA + interacts with perovskite precursors (FAI and PbI 2 ) through coordination and hydrogen bonding, suppressing excessive nucleation and reducing nucleation density. During annealing, DPPEABF 4 undergoes a reversible solid‐to‐liquid phase transition that buffers heat transfer, ensuring more uniform heating and slower, more controlled crystallization across the substrate. These effects collectively yield perovskite films with enlarged grains, reduced defect densities, and improved crystallinity. Concurrently, π–π stacking between DPPEA + and Me‐4PACz establishes an interfacial dipole that increases the work function and tunes the energy‐level alignment at the buried interface, facilitating efficient hole transport. As a result, the optimized devices achieve a champion power conversion efficiency of 26.52% (certified 26.46%) and retain over 90% of their initial efficiency after more than 2000 h of storage under 30–40% relative humidity. This work provides a new paradigm for designing dynamic interfacial materials for high‐performance optoelectronic devices.

Article Details

Volume / Issue Vol. 38, Issue 17
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (20)

P

Peidong Chen

Z

Zeping Ou

M

Mingyang Gao

C

Can Wang

M

Mingyu Song

Peking university, Beijing, China, China

L

Lei Liu

Y

Yi Pan

Department of Chemistry, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong 999077, China

Q

Qin Gao

Z

Zhiping Liu

State Key Laboratory of Advanced Materials for Intelligent Sensing, Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science

W

Wei Wan

MOE Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Department of Chemistry

J

Junjie Zhang

J

Jiahui Shen

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

Q

Qiangwei Wang

Multi‐disciplinary Research Division Institute of High Energy Physics Chinese Academy of Sciences Beijing China

Z

Zeyun Xiao

Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences

N

Nabonswende Aida Nadege Ouedraogo

Y

Yu Chen

T

Tingming Jiang

R

Rui Wang

H

Haoxuan Guo

K

Kuan Sun