Multifunctional Conjugated Ligands Synergistically Optimize the Interface and Regulate Crystallization for High‐Performance 2D/3D Perovskite Solar Cells

Y Yonglong Yang (College of Chemistry and Materials/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education/National Engineering Research Center for Carbohydrate Synthesis, Jiangxi Normal University Nanchang P. R. China) G Gang Xie (Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science) C Chuizheng Feng (Institute of Polymer Optoelectronic Materials and Devices/State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou P. R. China) Z Zhaojin Wang (Faculty of Materials Science and Energy Engineering Shenzhen University of Advanced Technology Shenzhen China) S Shuo Yao C Chunhui Duan F Fei Huang Y Yiwang Chen (College of Chemistry and Chemical Engineering/Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, Nanchang, China.) A Aihui Liang (College of Chemistry and Materials/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang 330022, China)

Abstract

ABSTRACT The interfacial optimization of self‐assembled monolayers (SAMs) and precise regulation of perovskite crystallization process are crucial for improving the performance and stability of inverted perovskite solar cells (PSCs). Herein, we designed two multifunctional conjugated cationic ligands (TDZI and TzTzI) to modify the SAMs/perovskite interface. This study reveals that the conjugated ligands form tighter and ordered π–π stacking with [4‐[(3,6‐dimethyl‐9H‐carbazol‐9‐yl) butyl] phosphonic acid (Me‐4PACz), efficiently suppressing Me‐4PACz aggregation. Meanwhile, ligands dissolved in the perovskite precursor induce the bottom‐up growth of 2D/3D heterojunction, which effectively regulates perovskite crystallization process and suppresses defect formation, thereby yielding high‐quality and uniform perovskite films. These synergistic effects enhance the adhesion of SAM/perovskite interface, reduce interfacial non‐radiative recombination loss, and accelerate the extraction and transport of carriers. Finally, the inverted PSCs modified with TzTzI achieved an exceptional power conversion efficiency (PCE) of 26.61% with a high open‐circuit voltage ( V oc ) of 1.204 V, which is among the highest efficiencies reported to date for 2D/3D heterojunction PSCs. Moreover, the unencapsulated devices exhibit excellent humidity, thermal and operational stability under the ISOS protocols. Excitingly, the TzTzI‐based PSCs delivered outstanding PCEs of 24.5% for 1 cm 2 devices, 20.61% for devices with 1.72 eV bandgap, and 22.14% for mini‐modules.

Article Details

Volume / Issue Vol. 38, Issue 32
Published June 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

Y

Yonglong Yang

College of Chemistry and Materials/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education/National Engineering Research Center for Carbohydrate Synthesis, Jiangxi Normal University Nanchang P. R. China

G

Gang Xie

Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science

C

Chuizheng Feng

Institute of Polymer Optoelectronic Materials and Devices/State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou P. R. China

Z

Zhaojin Wang

Faculty of Materials Science and Energy Engineering Shenzhen University of Advanced Technology Shenzhen China

S

Shuo Yao

C

Chunhui Duan

F

Fei Huang

Y

Yiwang Chen

College of Chemistry and Chemical Engineering/Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, Nanchang, China.

A

Aihui Liang

College of Chemistry and Materials/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang 330022, China