Monte Carlo calculation of electron backscattering coefficients for Fe and Ni solids

H H. I. Imtiaz (Department of Physics, University of Science and Technology of China 1 , Hefei, Anhui 230026,) S S. F. Mao (School of Nuclear Science and Technology, University of Science and Technology of China 2 , Hefei, Anhui 230026,) Y Y. B. Zou (School of Physics and Electronic Engineering, Xinjiang Normal University 3 , Urumqi, Xinjiang 830054,) B B. Da Z Z. J. Ding

Abstract

We have calculated the electron backscattering coefficients η(Ep) for elemental solids, Fe and Ni, for primary electron energies of 0.1–100 keV, by utilizing a state-of-the-art Monte Carlo simulation model. A relativistic dielectric functional approach was applied to calculate the electron inelastic cross section, incorporating various data sets of the optical energy loss function (ELF). The calculation results reveal that the backscattering coefficient is profoundly affected by the ELF, conforming to the f-sum and ps-sum rules. To evaluate uncertainties in relation to experimental data, we examined the systematic errors related to contaminated surfaces. Simulations of Fe and Ni surfaces contaminated with carbonaceous atomic layers successfully accounted for the trend of the observed experimental data. Our findings indicate that precise backscattering coefficient value should either be measured from thoroughly cleaned surfaces or calculated from the Monte Carlo simulation that utilize reliable optical constant data. These simulation data have worth in multiple scientific fields particularly for the application of scanning electron microscopy. Given recent advancements in the accurate measurement of optical constants through reflection electron energy loss spectroscopy, there is considerable promise for developing a robust theoretical database of electron backscattering coefficients for the clean surfaces of elemental solids.

Article Details

Volume / Issue Vol. 139, Issue 21
Published June 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

H

H. I. Imtiaz

Department of Physics, University of Science and Technology of China 1 , Hefei, Anhui 230026,

S

S. F. Mao

School of Nuclear Science and Technology, University of Science and Technology of China 2 , Hefei, Anhui 230026,

Y

Y. B. Zou

School of Physics and Electronic Engineering, Xinjiang Normal University 3 , Urumqi, Xinjiang 830054,

B

B. Da

Z

Z. J. Ding