Molecularly Confined Domains Enable Halide‐Stable Wide‐Bandgap Perovskites

Y Youming Zhu (State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou Zhejiang P. R. China) B Biao Li (Beijing Key Laboratory of Theory and Technology for Advanced Batteries Materials, School of Materials Science and Engineering) B Baochao Zheng (College of Chemistry and Materials Science Jinan University Guangzhou Guangdong Province P. R. China) X Xingtao Wang J Jiyao Wei X Xuegong Yu D Deren Yang Y Yong Wang

Abstract

ABSTRACT Stable wide‐bandgap (WBG) perovskites are essential for achieving highly efficient tandem photovoltaics. However, state‐of‐the‐art tandem solar cells typically employ mixed‐halide WBG perovskite, yet halide phase segregation remains a critical bottleneck. Here, we design a molecular confinement domain in which paired iodide‐bearing organic ligands bind adjacent FA + cations and are interconnected by a bifunctional diammonium linker, effectively suppressing halide segregation by constraining the dynamic motion of orientable FA + cations at the surface and interfaces of wide‐bandgap perovskites. The suppression of this motion effectively strengthens lead‐halide (Pb‐X) bond strength, reinforces the lattice rigidity, reduces lattice vibrational amplitude and increases halide ion migration energy barrier. As a result, I‐Br mixed‐halide segregation and defect evolution under prolonged illumination are effectively suppressed. Finally, the resulting mixed‐halide WBG films exhibit low trap densities, improved carrier transport, and enhanced light/thermal stability. Such concept is applicable to both 1.68 and 1.78 eV perovskite, yielding efficiencies of 24.21% and 21.20% in single‐junction cells, respectively. When integrated into silicon‐based tandem cells, the device delivers an efficiency of 33.59%, alongside durable long‐term stability with a T 96 lifetime of 1000 h under continuous operation.

Article Details

Volume / Issue Vol. 38, Issue 40
Published July 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

Y

Youming Zhu

State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou Zhejiang P. R. China

B

Biao Li

Beijing Key Laboratory of Theory and Technology for Advanced Batteries Materials, School of Materials Science and Engineering

B

Baochao Zheng

College of Chemistry and Materials Science Jinan University Guangzhou Guangdong Province P. R. China

X

Xingtao Wang

J

Jiyao Wei

X

Xuegong Yu

D

Deren Yang

Y

Yong Wang