Modulation of Magnetic Domain and the Occurrence of Antisymmetric Magnetoresistance in the Folded van der Waals Ferromagnet Fe ₃ GaTe ₂

Abstract

Abstract Emergent magnetism in 2D materials has attracted significant attention due to their intrinsic magnetic order, which persists down to the monolayer limit, and their potential applications in spintronic devices. In particular, domain structure modulation plays a crucial role in 2D magnet‐based nano‐spintronic devices. However, the fabrication and modulation of the desired domain structure, along with the establishment of reliable electrical write/read operations, remain significant challenges. Herein, a unique structure‐shaping way to modulate domain structure is demonstrated via folding a continuous flat Fe 3 GaTe 2 nanosheet. Accompanied by magnetic domain structure transformation, the symmetric butterfly‐shaped magnetoresistance (MR) curve changes to an antisymmetric field‐dependent magnetoresistance. Notably, the MR exhibits either the same or opposite sign at geometrically equivalent positions, depending on the relative angle of the current flow and domain wall direction. The MR behavior with respect to sweeping field and electrodes position is due to the circulating current in the vicinity of the domain wall. More importantly, this new concept of manipulating domain structure and its associated magneto‐transport behavior can inspire novel spintronic devices fabrication and application.