Modulation of electronic structure via dual moiré patterns in twisted 1 <i>T</i> -TaSe <sub>2</sub>

Y Yonghao Liu (Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control) Y Yuan Zheng (State Key Laboratory of Coordination Chemistry, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering) K Kun Yang W Wenhao Zhang (School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai 201210, China) Z Zongxiu Wu (Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control) J Jingjing Gao X Xuan Luo (Institute of Materials Research, Tsinghua Shenzhen International Graduate School) Y Yuping Sun (Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS) J Jin Zhang Y Yi Yin (Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control)

Abstract

We investigate a twisted bilayer of 1 T -TaSe 2 (twist angle &lt; 4 ° ) using scanning tunneling microscopy and spectroscopy, revealing that the coexisting twisted atomic lattice and charge density wave (CDW) superlattice generate a dual moiré structure with distinct electronic modulation effects: The topographic moiré pattern stems from atomic lattice twisting modulating CDW intensity, while the twisted CDW superlattice drives a continuous insulator-to-metal transition, as evidenced by electronic gap evolution from large to metallic states. Density functional theory calculations show this transition arises from twist-induced changes in star of David motif stacking. Using the moiré-period gap map as the interlayer potential V ( r ) , we construct a continuum model via its Fourier components V G , finding that V G mediates multiple interlayer scattering processes that produce numerous superposition states manifesting as split flat-band pairs with distinct energy gaps. This work elucidates a CDW-twist-based mechanism for electronic control in 1 T -TaSe 2 and provides insights into Mott physics and complex electronic phases in related materials.

Article Details

Volume / Issue Vol. 123, Issue 11
Published March 17, 2026
ISSN 0027-8424
Publisher National Academy of Sciences

Authors (10)

Y

Yonghao Liu

Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control

Y

Yuan Zheng

State Key Laboratory of Coordination Chemistry, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering

K

Kun Yang

W

Wenhao Zhang

School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai 201210, China

Z

Zongxiu Wu

Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control

J

Jingjing Gao

X

Xuan Luo

Institute of Materials Research, Tsinghua Shenzhen International Graduate School

Y

Yuping Sun

Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS

J

Jin Zhang

Y

Yi Yin

Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control