Modulation of electronic structure via dual moiré patterns in twisted 1 <i>T</i> -TaSe <sub>2</sub>
Abstract
We investigate a twisted bilayer of 1 T -TaSe 2 (twist angle < 4 ° ) using scanning tunneling microscopy and spectroscopy, revealing that the coexisting twisted atomic lattice and charge density wave (CDW) superlattice generate a dual moiré structure with distinct electronic modulation effects: The topographic moiré pattern stems from atomic lattice twisting modulating CDW intensity, while the twisted CDW superlattice drives a continuous insulator-to-metal transition, as evidenced by electronic gap evolution from large to metallic states. Density functional theory calculations show this transition arises from twist-induced changes in star of David motif stacking. Using the moiré-period gap map as the interlayer potential V ( r ) , we construct a continuum model via its Fourier components V G , finding that V G mediates multiple interlayer scattering processes that produce numerous superposition states manifesting as split flat-band pairs with distinct energy gaps. This work elucidates a CDW-twist-based mechanism for electronic control in 1 T -TaSe 2 and provides insights into Mott physics and complex electronic phases in related materials.
Article Details
Journal Info
Proceedings of the National Academy of Sciences
National Academy of Sciences
Authors (10)
Yonghao Liu
Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control
Yuan Zheng
State Key Laboratory of Coordination Chemistry, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering
Kun Yang
Wenhao Zhang
School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai 201210, China
Zongxiu Wu
Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control
Jingjing Gao
Xuan Luo
Institute of Materials Research, Tsinghua Shenzhen International Graduate School
Yuping Sun
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS
Jin Zhang
Yi Yin
Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control