Modulating Janus Effect of Cations to Control Electronic Symmetry and Hole Mobility in Spiro‐OMeTAD for Perovskite Solar Cells

L Lianghe Hu (Department National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 China) X Xinrui Qi R Runbo Zhao (Zhejiang Engineering Research Center for Fabrication and Application of Advanced Photovoltaic Materials Institute for Carbon Neutrality Ningbo Global Innovation Centre Zhejiang University Ningbo 315199 China) J Jiayan Liu Z Zhenqiang Shen (College of Engineering and Applied Sciences Nanjing University Nanjing 210093 China) N Nuo Xu (The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry) Y Yufei Zhong Z Zhiqun Lin (Department of Chemical and Biomolecular Engineering) B Bing Wang Z Zhigang Zou (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China)

Abstract

Abstract Li‐TFSI‐doped Spiro‐OMeTAD (Spiro) remains the benchmark hole transport material in perovskite solar cells (PSCs). The success of Li‐TFSI doping has reinforced the prevailing notion that raising the oxidation level (OL) of Spiro proportionally enhances its conductivity, which relies on both hole concentration and mobility. While the role of hole concentration has been exhaustively explored, the origin of hole mobility enhancement has remained elusive. Here, we unveil the Janus effect of metal cations that decouples Spiro's hole mobility from its OL. Metal cation–π interactions break the molecular symmetry of Spiro, reshaping its electronic structure and directly modulating hole mobility, whereas ion–ion interactions between metal cations and TFSI − anions exclusively govern the OL. By quantifying these orthogonal interactions, we establish a clear structure–property relationship that links electronic symmetry to macroscopic charge transport. This framework provides a rational design paradigm for next‐generation, high‐mobility hole conductors, applicable to perovskite solar cells and a wide range of optoelectronic materials and devices.

Article Details

Volume / Issue Vol. 65, Issue 4
Published January 22, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (10)

L

Lianghe Hu

Department National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 China

X

Xinrui Qi

R

Runbo Zhao

Zhejiang Engineering Research Center for Fabrication and Application of Advanced Photovoltaic Materials Institute for Carbon Neutrality Ningbo Global Innovation Centre Zhejiang University Ningbo 315199 China

J

Jiayan Liu

Z

Zhenqiang Shen

College of Engineering and Applied Sciences Nanjing University Nanjing 210093 China

N

Nuo Xu

The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry

Y

Yufei Zhong

Z

Zhiqun Lin

Department of Chemical and Biomolecular Engineering

B

Bing Wang

Z

Zhigang Zou

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China