Modeling photocathode stoichiometric effects on quantum efficiency

K Kevin L. Jensen (Institute for Research in Electronics and Applied Physics, University of Maryland 1 , College Park, Maryland 20742,) D Dimitre Dimitrov (Los Alamos National Laboratory 2 , Los Alamos, New Mexico 87545,) D Daniel Finkenstadt (US Naval Academy 3 , Annapolis, Maryland 21402,) G Gaoxue Wang V Vitaly Pavlenko (Los Alamos National Laboratory 2 , Los Alamos, New Mexico 87545,) S Sandip Aryal E Enrique R. Batista (Theoretical Division) J John J. Petillo (Leidos 4 , Tewksbury, Massachusetts 01876,) E Emma Rocco (Naval Research Laboratory 5 , Washington, DC 20375,) P Patrick G. O’Shea (IREAP, University of Maryland 6 , College Park, Maryland 20742,)

Abstract

Useful models of quantum efficiency (QE) for growth characterization but also simulation require material and optical parameters that exhibit complex dependencies on frequency and composition. We combine a Moments model of QE with a Lorentz–Drude–Resonant (LDR) model for metals and its extension to an Adachi–Drude–Resonant (ADR) model for semiconductors for the optical parameters based on density functional theory (DFT) simulations. A rapid numerical implementation is developed for characterization studies that will be advantageous in simulating particle accelerators and Free Electron Lasers using particle-in-cell codes. Changes in stoichiometry are then related to variations in QE, reflectivity, and laser penetration depth as governed by the ADR parameterization for alkali antimonide materials compared to a baseline DFT simulation of Cs3Sb. The correlation between LDR/ADR parameters and stoichiometry allows for an modifiable parameter library enabling user alterations for simulations to explore the effects of changes in composition or to compare/contrast different photocathode bulk materials in beam optics codes.

Article Details

Volume / Issue Vol. 139, Issue 22
Published June 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (10)

K

Kevin L. Jensen

Institute for Research in Electronics and Applied Physics, University of Maryland 1 , College Park, Maryland 20742,

D

Dimitre Dimitrov

Los Alamos National Laboratory 2 , Los Alamos, New Mexico 87545,

D

Daniel Finkenstadt

US Naval Academy 3 , Annapolis, Maryland 21402,

G

Gaoxue Wang

V

Vitaly Pavlenko

Los Alamos National Laboratory 2 , Los Alamos, New Mexico 87545,

S

Sandip Aryal

E

Enrique R. Batista

Theoretical Division

J

John J. Petillo

Leidos 4 , Tewksbury, Massachusetts 01876,

E

Emma Rocco

Naval Research Laboratory 5 , Washington, DC 20375,

P

Patrick G. O’Shea

IREAP, University of Maryland 6 , College Park, Maryland 20742,