Minimizing Photovoltage Loss for Efficient p–i–n Perovskite Solar Cells via a Dual‐Site Anchoring Bridge
Abstract
Abstract Perovskite solar cells (PSCs) suffer from severe nonradiative recombination‐induced photovoltage loss, limiting the device overall performance. To address this key issue, an efficient strategy via a dual‐site anchoring bridge is developed to engineer the heterointerface between perovskite and PCBM electron transport layer. The resulting reinforced and homogeneous passivation by forming strong dual‐site P─O─Pb covalent bonds, effectively decreases perovskite surface defect density. This simultaneously reconstructs surface energetics of perovskite with upshifted Fermi level and enhanced electric field, promoting electron extraction at the perovskite/PCBM heterointerface. Corresponding nonradiative recombination at such perovskite electron‐selective contact is greatly suppressed. An impressive power conversion efficiency of 26.3% is obtained with excellent stability under continuous maximum power point operation, and a supreme photovoltage of 1.215 V in p–i–n PSCs via interfacial engineering reported so far. This work offers a promising strategy for solving the perovskite contact challenge via innovative modifier for further improvement of PSCs.
Article Details
Authors (19)
Xiaoyun Wan
School of Physics East China Normal University Shanghai China
Shaobing Xiong
School of Physics East China Normal University Shanghai China
Hao Wang
Division of Quantitative Sciences, Department of Oncology Johns Hopkins University School of Medicine Baltimore Maryland USA
Kai Jiang
Department of Pharmacy, The First Affiliated Hospital of the University of Science and Technology of China, and State Key Laboratory of Precision and Intelligent Chemistry
Zhennan Lin
Key Laboratory of Polar Materials and Devices (MOE), and Department of Electronics
Di Li
State Key Laboratory of Biopharmaceutical Preparation and Delivery, Institute of Process Engineering, Chinese Academy of Sciences, 1 North 2nd Street, Zhongguancun, Haidian District, Beijing 100190, P. R. China
Jinyang Yu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering
Bin Zhao
Jiyuan Chen
Songjie Zhou
Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou 215123 China
Lixuan Kan
School of Chemistry and Chemical Engineering
Bo Li
Yuning Wu
School of Physics and Electronic Science East China Normal University Shanghai 200241 China
Yefeng Yao
Shanghai Key Laboratory of Magnetic Resonance East China Normal University Shanghai China
Yanbo Wang
Department of Materials Science and Engineering, City University of Hong Kong
Haiming Zhu
Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Institute of Fundamental and Transdisciplinary Research
Zhenrong Sun
State Key Laboratory of Precision Spectroscopy, School of Physics
Junhao Chu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics
Qinye Bao
School of Physics East China Normal University Shanghai China