Metal Single Atoms Beyond Catalysis as Quantum Modulators for Programmable Electronic Structures and Adaptive Electronics

J Jiachen Sun T Tong Zhou L Linhe Yu (Institute of Optoelectronics & College of Future Information Technology Fudan University Shanghai P. R. China) M Mukun He (Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering Northwestern Polytechnical University Xi'an Shaanxi 710072 P.R. China) H Hua Qiu (Shaanxi Key Laboratory of Macromolecular Science and Technology School of Chemistry and Chemical Engineering Northwestern Polytechnical University Xi'an P. R. China) E Enyuan Zhou Z Zhizhong Wang M Minhao Zhang H Huanqin Zhao (School of Materials Science and Chemical Engineering Xi'an Technological University Xi'an Shaanxi P. R. China) D Di Liu Y Yufu Gao (Institute of Optoelectronics Fudan University Shanghai P. R. China) Y Yipeng Zang X Xiaoliang Mo Q Qianpeng Zhang (Hubei Provincial Key Laboratory of Chemical Equipment Intensification and Intrinsic Safety, Hubei Provincial Engineering Technology Research Center of Green Chemical Equipment, School of Mechanical and Electrical Engineering, Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Optical Information and Energy Engineering, Wuhan Institute of Technology , Wuhan 430073,) L Long Pan B Ben Fei (Department of Information Engineering The Chinese University of Hong Kong Hongkong P. R. China) H Hualiang Lv

Abstract

ABSTRACT Metal single atoms have long been recognized for their catalytic activity through strong local interactions with host substrates. Beyond catalysis, their potential to reconfigure substrate electronic structures surpassing the host's intrinsic limits remains largely unexplored. Here, we develop an atomically engineered band‐modulation strategy, in which representative d ‐series (Fe, Co, Ni, Cu) and p ‐series (In, Sn, Sb, Te) atoms are anchored on 2D frameworks, including MXenes, graphene, g‐C 3 N 4 , and MoS 2 . These atoms act as quantum modulators, precisely reconfiguring substrate structures and inducing anomalous quantum effects, which yield distinctive phenomena, including band inversion, flattening, and van Hove singularities, features rarely attainable through conventional band‐engineering strategies. The tailored electronic landscape enables linear, voltage‐driven tuning of electrical behavior, achieving several tens of times enhancement in dielectric permittivity and a dynamic and continuous transition from semiconducting to conductive states, all realized under an exceptionally low bias (<1.0 V). These functionalities are extended to a flexible electromagnetic switch that achieves programmable control of signal transmission, absorption, and reflection, overcoming the persistent difficulty of dynamic electromagnetic regulation while operating at a record‐thin microscale thickness (∼600 µm). This work establishes an atomically engineered band‐modulation strategy as a versatile platform, paving the way for reconfigurable electronics and quantum devices.

Article Details

Volume / Issue Vol. 38, Issue 13
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (17)

J

Jiachen Sun

T

Tong Zhou

L

Linhe Yu

Institute of Optoelectronics & College of Future Information Technology Fudan University Shanghai P. R. China

M

Mukun He

Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering Northwestern Polytechnical University Xi'an Shaanxi 710072 P.R. China

H

Hua Qiu

Shaanxi Key Laboratory of Macromolecular Science and Technology School of Chemistry and Chemical Engineering Northwestern Polytechnical University Xi'an P. R. China

E

Enyuan Zhou

Z

Zhizhong Wang

M

Minhao Zhang

H

Huanqin Zhao

School of Materials Science and Chemical Engineering Xi'an Technological University Xi'an Shaanxi P. R. China

D

Di Liu

Y

Yufu Gao

Institute of Optoelectronics Fudan University Shanghai P. R. China

Y

Yipeng Zang

X

Xiaoliang Mo

Q

Qianpeng Zhang

Hubei Provincial Key Laboratory of Chemical Equipment Intensification and Intrinsic Safety, Hubei Provincial Engineering Technology Research Center of Green Chemical Equipment, School of Mechanical and Electrical Engineering, Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Optical Information and Energy Engineering, Wuhan Institute of Technology , Wuhan 430073,

L

Long Pan

B

Ben Fei

Department of Information Engineering The Chinese University of Hong Kong Hongkong P. R. China

H

Hualiang Lv