Memristive InAs‐Based Semiconductors with Anisotropic Ion Transport
Abstract
AbstractThe use of the van der Waals (vdW) gap as an ion migration path, similar to cathode materials in lithium‐ion batteries, enables improved ion migration. If these materials also possess semiconductor properties, they can simultaneously control electron or hole transport. Such materials can be used in memtransistors, which combine memory and semiconductor characteristics. However, the existing materials rely on defects such as grain boundaries as migration paths, resulting in high ion migration energy barriers and switching voltages. Herein, memtransistors are demonstrated using HxNa2‐xIn2As3, which utilizes the vdW gap for ion migration, resulting in lower ion migration energy barriers. It is confirmed that ion migration occurs more readily in the [010] direction in a low‐symmetry crystal structure owing to a lower migration energy barrier, whereas migration does not occur in the [100] direction, demonstrating directional dependence. This finding provides crucial guidelines for identifying ion migration in semiconductor materials, which can otherwise be overlooked. The use of the vdW gap as the migration path, variation in migration energy barriers with the ion movement direction, and their impact on low power consumption are critical factors that will guide the future development of memtransistor materials.
Article Details
Authors (20)
Taeyoung Kim
Jongbum Won
Jihong Bae
Department of Materials Science and Engineering Yonsei University Seoul South Korea
Giyeok Lee
Minwoo Lee
Sangjin Choi
Department of Materials Science and Engineering Yonsei University Seoul 120–749 South Korea
Sungsoon Kim
Dongchul Seo
Department of Materials Science and Engineering Yonsei University Seoul 120–749 South Korea
Youngjun Cho
Department of Materials Science and Engineering Yonsei University Seoul 120–749 South Korea
Taehoon Kim
Silklab, Department of Biomedical Engineering, Tufts University
Bokyeong Kim
Department of Materials Science and Engineering Yonsei University Seoul 120–749 South Korea
Hong Choi
Department of Materials Science and Engineering Yonsei University Seoul South Korea
Byung‐Kyu Yu
Center for Nanomedicine Institute for Basic Science (IBS) Seoul 03722 South Korea
Jaegyeom Kim
Icheon branch Korea Institute of Ceramic Engineering and Technology Icheon 17303 South Korea
Soohyung Park
Jinwoo Cheon
Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
Jong‐Young Kim
Icheon branch Korea Institute of Ceramic Engineering and Technology Icheon 17303 South Korea
Juan Bisquert
Instituto de Tecnología Química (Universitat Politècnica de València-Consejo Superior de Investigaciones Científicas), Av. dels Tarongers, València 46022, Spain
Aloysius Soon
Wooyoung Shim