Measurements of elastic constants of wide Al-composition range AlGaN epi-materials from metalorganic chemical vapor deposition

G Guang Chen (State Key Laboratory of Precision and Intelligent Chemistry) M Manika Tun Nafisa (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) Z Zhe Chuan Feng (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) H Hao-Hsiung Lin (Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University 4 , Taipei 10617,) F Fangfei Li G Gu Xu (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences) J Jeffrey Yiin (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) L Lingyu Wan W Weijie Lu B Benjamin Klein (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) I Ian Ferguson (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) C Changcai Cui

Abstract

Brillouin scattering measurements and investigation on AlGaN alloy films with Al compositions of 00.62 from metalorganic chemical vapor deposition are performed. Six elastic constants and bulk modulus of a wide Al-composition range of AlGaN epi-materials are deduced. It is revealed that the elastic constant values of ternary AlGaN with Al compositions of 0.20–0.62 are much greater than those of binary GaN and AlN. It is indicated that the addition of Al in GaN or Ga in AlN has caused a rise in the bulk modulus. The graphical variations and formalized polynomial descriptions of elastic constants and bulk modulus vs Al composition in the full Al range are presented. Brillouin scattering studies on AlGaN alloys address a previously unexplored research gap in wide-bandgap AlGaN semiconductors, as no such studies have been reported so far to the best of our available knowledge. This research and the detailed experimental and calculated data may provide a foundation for more in-depth scientific analyses and future investigations.

Article Details

Volume / Issue Vol. 140, Issue 1
Published July 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (12)

G

Guang Chen

State Key Laboratory of Precision and Intelligent Chemistry

M

Manika Tun Nafisa

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

Z

Zhe Chuan Feng

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

H

Hao-Hsiung Lin

Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University 4 , Taipei 10617,

F

Fangfei Li

G

Gu Xu

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences

J

Jeffrey Yiin

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

L

Lingyu Wan

W

Weijie Lu

B

Benjamin Klein

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

I

Ian Ferguson

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

C

Changcai Cui