Martensitic phase transformation and thickness-dependent magnetization dynamics in off-stoichiometric Co–Fe–Ti–Si Heusler alloy thin films

M Mainur Rahaman (School of Physics, University of Hyderabad 1 , Hyderabad- 500046, Telangana,) L Lanuakum A. Longchar (School of Physics, University of Hyderabad 1 , Hyderabad- 500046, Telangana,) R Rajeev Rawat (UGC-DAE Consortium for Scientific Research 2 , Indore- 452001,) M M. Manivel Raja (Defence Metallurgical Research Laboratory 3 , Hyderabad- 500058, Telangana,) S Savita Sahu (CSIR-National Physical Laboratory (NPL) 4 , Dr. K. S. Krishnan Marg, New Delhi- 110012,) G G. A. Basheed (CSIR-National Physical Laboratory (NPL) 4 , Dr. K. S. Krishnan Marg, New Delhi- 110012,) S S. N. Kaul (School of Physics, University of Hyderabad 1 , Hyderabad- 500046, Telangana,) S S. Srinath

Abstract

We report a systematic investigation of the influence of film thickness (25–65 nm) on the martensitic phase transformation (MPT) and the associated magneto-transport and magnetization dynamics of off-stoichiometric Co–Fe–Ti–Si Heusler alloy thin films. Electrical resistivity data reveal a clear first-order martensitic phase transformation in all the films, characterized by thermal hysteresis and a significant drop in temperature-dependent resistivity. The characteristic martensitic transformation temperatures show only a weak dependence on thickness, indicating that MPT is intrinsic to the off-stoichiometric system. Detailed analysis of transport data establishes that the observed resistivity minima at low temperatures result from a competition between electron–phonon scattering and disorder-induced quantum corrections. In the vicinity of MPT, transverse magnetoresistance remains positive and increases sharply from its small magnitude in the martensite phase. Magnetization data confirm that all the films are soft ferromagnetic across the transformation, with very weak magnetic signatures of the transformation. Broadband ferromagnetic resonance reveals that the Gilbert damping constant goes through a minimum (α = 0.0076) for the highest B2-ordered 50 nm film.

Article Details

Volume / Issue Vol. 139, Issue 23
Published June 21, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (8)

M

Mainur Rahaman

School of Physics, University of Hyderabad 1 , Hyderabad- 500046, Telangana,

L

Lanuakum A. Longchar

School of Physics, University of Hyderabad 1 , Hyderabad- 500046, Telangana,

R

Rajeev Rawat

UGC-DAE Consortium for Scientific Research 2 , Indore- 452001,

M

M. Manivel Raja

Defence Metallurgical Research Laboratory 3 , Hyderabad- 500058, Telangana,

S

Savita Sahu

CSIR-National Physical Laboratory (NPL) 4 , Dr. K. S. Krishnan Marg, New Delhi- 110012,

G

G. A. Basheed

CSIR-National Physical Laboratory (NPL) 4 , Dr. K. S. Krishnan Marg, New Delhi- 110012,

S

S. N. Kaul

School of Physics, University of Hyderabad 1 , Hyderabad- 500046, Telangana,

S

S. Srinath