Mapping of the full polarization switching pathways for HfO <sub>2</sub> and its implications

Q Qi Hu S Shuning Lv (School of Physics, Beihang University) H Hsiaoyi Tsai (School of Physics, Beihang University) Y Yufeng Xue (School of Physics, Beihang University) X Xixiang Jing (Department of Materials Science and Engineering, Northwestern Polytechnical University) F Fanrong Lin (Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics) C Chuanjia Tong (School of Physics, Central South University) T Tengfei Cao (Department of Materials Science and Engineering, Northwestern Polytechnical University) G Gilberto Teobaldi (Scientific Computing Department, Science & Technology Facilities Council UKRI) L Li-Min Liu (School of Physics)

Abstract

The discovery of ferroelectric phases in HfO 2 offers insights into ferroelectricity. Its unique fluorite structure and complex polarization switching pathways exhibit distinct characteristics, challenging conventional analysis methods. Combining group theory and first-principles calculations, we identify numerous unconventional electric polarization switching pathways in HfO 2 with energy barriers of 0.32 to 0.57 eV as a function of the different shift in the suboxygen lattices. In total, we identify 47 switching pathways for the orthorhombic phase, corresponding to the left cosets of the F m 3 ¯ m group with P c a 2 1 group. Contrary to the conception that the tetracoordinated oxygen (O IV ) layers are inactive, our result demonstrates that both the tricoordinated oxygen (O III ) and O IV can be displaced, leading to polarization switching along any axial direction. The multiple switching pathways in HfO 2 result in both 180° polarization reversal and the formation of 90° domains observed experimentally. Calculations show that specific switching pathways depend on the orientation of the applied electric field relative to the HfO 2 growth surface. This allows HfO 2 to automatically adjust the in-plane polarization direction under an out-of-plane electric field, thereby maximizing the out-of-plane component and contributing to the wake-up process. These findings redefine the roles of O III and O IV layers, clarify unconventional switching pathways, and enhance our understanding of electric field response mechanisms, wake-up, and fatigue in ferroelectrics.

Article Details

Volume / Issue Vol. 122, Issue 7
Published February 18, 2025
ISSN 0027-8424
Publisher National Academy of Sciences

Authors (10)

Q

Qi Hu

S

Shuning Lv

School of Physics, Beihang University

H

Hsiaoyi Tsai

School of Physics, Beihang University

Y

Yufeng Xue

School of Physics, Beihang University

X

Xixiang Jing

Department of Materials Science and Engineering, Northwestern Polytechnical University

F

Fanrong Lin

Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics

C

Chuanjia Tong

School of Physics, Central South University

T

Tengfei Cao

Department of Materials Science and Engineering, Northwestern Polytechnical University

G

Gilberto Teobaldi

Scientific Computing Department, Science & Technology Facilities Council UKRI

L

Li-Min Liu

School of Physics