Mapping defect distribution in transparent single-walled carbon nanotube film with electrical resistance tomography

Abstract

Abstract We extend the application of electrical resistance tomography (ERT) to visualize I G / I D distribution in transparent single-walled carbon nanotube (SWCNT) thin films. By establishing the correlation between disorder and resistance through experimental measurements, we successfully converted ERT-reconstructed conductivity distributions into I G / I D maps. This approach enabled the detection of a defect region with an I G / I D ratio of approximately 15 embedded in a pristine SWCNT film ( I G / I D = 18.1), corresponding to a minimum detectable resistance ratio ( R / R 0 ) of 1.59. Moreover, in a sample containing two defect regions introduced by plasma irradiation at 20 and 40 W, ERT successfully distinguished them despite the small difference in I G / I D ratio (1.1). Simulation studies revealed that positional deviations in reconstructed images can be attributed to electrode misalignment, contact resistance variation, and plasma-induced defect expansion. These results demonstrate the feasibility of ERT as a non-destructive, high-resolution technique for evaluating disorder variations in conductive thin films. Furthermore, due to its conductivity-based imaging principle, the method is applicable to other materials such as graphene, indium tin oxide (ITO), and metal nanowire networks, offering promise for real-time monitoring and quality assurance in large-area optoelectronic device manufacturing.