Magnonic combinatorial memory for high-density data storage

M Mykhaylo Balinskiy (Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,) P Paulo Julio (Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,) J Jeffrey Vargas (Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,) D Diana Bisono Balaguer (Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,) A Alexander Khitun (Department of Electrical and Computer Engineering, University of California - Riverside , Riverside, California 92521,)

Abstract

In this work, we describe Magnonic Combinatorial Memory (MCM), where the bits of information are stored in the signal propagation paths in the network. MCM is an active ring circuit consisting of electric and magnonic parts. The electric part includes a broadband amplifier, phase shifters, and frequency filters. The magnonic part is a mesh of frequency-dependent elements. Signal propagation path(s) in the mesh depend on the amplitude/phase matching between the electric and magnetic parts. The operation of the MCM is described based on the network model, where information is encoded in the S-parameters of the network elements as well as in the element arrangement in the network. We present experimental data for MCM with a four-terminal magnonic element. The element consists of a single-crystal yttrium iron garnet Y3Fe2(FeO4)3 film and magnets on top of the film. The results demonstrate a robust operation of MCM with an On/Off ratio for path detection exceeding 50 dB at room temperature. The number of possible arrangements scales factorially with the number of magnets, which allows us to drastically increase the data storage density. Physical limits of MCM are also discussed.

Article Details

Volume / Issue Vol. 139, Issue 3
Published January 21, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

M

Mykhaylo Balinskiy

Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,

P

Paulo Julio

Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,

J

Jeffrey Vargas

Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,

D

Diana Bisono Balaguer

Department of Electrical and Computer Engineering, University of California—Riverside , Riverside, California 92521,

A

Alexander Khitun

Department of Electrical and Computer Engineering, University of California - Riverside , Riverside, California 92521,