Journal of Applied Physics

Magnetotransport in high-mobility metamorphic InGaAs/InAlAs heterostructures with high InAs content

N N. S. Sandakov (M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,) S S. V. Gudina (M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,) V V. N. Neverov (M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,) M M. V. Yakunin (M.N. Mikheev lnstitute of Metal Physics of the Ural Branch of Russian Academy of Sciences 1 , 18 S. Kovalevskaya Street, Yekaterinburg 620077,) S S. D. Popov (M.N. Mikheev lnstitute of Metal Physics of the Ural Branch of Russian Academy of Sciences 1 , 18 S. Kovalevskaya Street, Yekaterinburg 620077,) A A. S. Bogoliubskii (M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,) K K. V. Turutkin (M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,) I I. S. Vasil'evskii (National Research Nuclear University “MEPhI,” 2 Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow, 115409,) A A. N. Vinichenko (National Research Nuclear University “MEPhI,” 2 Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow, 115409,)

Abstract

Magnetotransport studies of high-mobility metamorphic heterostructures containing InxGax−1As quantum well (QW) with a high InAs content (x ≥ 0.85) have been carried out. The scattering rate can be effectively controlled by adjusting the spacer thickness between the QW and the δ-doping layer. By analyzing the temperature and angle dependences of the Shubnikov–de Haas oscillations, the effective mass m∗, the quantum lifetime τq, the effective g∗-factor, and the nature of the scattering potential were determined. Estimates were also carried out within the framework of the kp Kane model, which confirm a significant manifestation of nonparabolicity in the measured values of m∗.

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Article Details

Volume / Issue Vol. 139, Issue 9
Published March 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics
ISSN: 0021-8979 Physical Sciences

Authors (9)

N

N. S. Sandakov

M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,

S

S. V. Gudina

M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,

V

V. N. Neverov

M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,

M

M. V. Yakunin

M.N. Mikheev lnstitute of Metal Physics of the Ural Branch of Russian Academy of Sciences 1 , 18 S. Kovalevskaya Street, Yekaterinburg 620077,

S

S. D. Popov

M.N. Mikheev lnstitute of Metal Physics of the Ural Branch of Russian Academy of Sciences 1 , 18 S. Kovalevskaya Street, Yekaterinburg 620077,

A

A. S. Bogoliubskii

M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,

K

K. V. Turutkin

M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 1 , Yekaterinburg 620108,

I

I. S. Vasil'evskii

National Research Nuclear University “MEPhI,” 2 Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow, 115409,

A

A. N. Vinichenko

National Research Nuclear University “MEPhI,” 2 Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow, 115409,

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