Luminescence efficiency and temperature quenching of spontaneous and stimulated emission in ultra-low dislocation density InN
Abstract
In this letter, we evaluate temperature quenching of photoluminescence in ultra-high quality epitaxial InN films to assess the internal quantum efficiency (IQE) of band-to-band light emission. Measured room-temperature carrier lifetimes of ∼10 ns in the samples with record-low dislocation density of Nd ∼ 5 × 108 cm−2 appear consistent with the diffusion-limited Shockley–Reed–Hall recombination model and lead to a maximum emission IQE of ∼1.5% at T = 300 K. For the stimulated emission (SE) regime, dislocation densities in excess of 1010 cm−2 can be actually tolerated without seriously affecting the SE threshold, and its temperature dependence is determined by a competition between radiative and Auger processes, with a crossover point around liquid-nitrogen temperature.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (8)
B. A. Andreev
Institute for Physics of Microstructures, Russian Academy of Sciences 1 , 603087 Nizhniy Novgorod,
K. E. Kudryavtsev
Institute for Physics of Microstructures, Russian Academy of Sciences 1 , 603087 Nizhniy Novgorod,
A. N. Yablonskiy
Institute for Physics of Microstructures of the Russian Academy of Sciences 1 , Nizhny Novgorod 603950,
D. N. Lobanov
Institute for Physics of Microstructures, Russian Academy of Sciences 1 , 603087 Nizhniy Novgorod,
A. V. Novikov
Institute for Physics of Microstructures of the Russian Academy of Sciences 1 , Nizhny Novgorod 603950,
H. P. Liu
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University 2 , Beijing 100871,
B. Sheng
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University 2 , Beijing 100871,
X. Q. Wang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,