Low‐Temperature Melting–Crystallization Transition in Perovskites With Self‐Trapped Excitons for Photovoltaic Downconversion

Y Yuan xie Y Yupeng Zhang J Jungan Wang Y Ying Chu (Institute of Carbon Neutrality Zhejiang Wanli University Ningbo 315100 P.R. China) C Chen Yu M Min Ye (State Key Laboratory of Natural and Biomimetic Drugs, School of Pharmaceutical Sciences, Peking University, 38 Xueyuan Road, Beijing 100191, China) L Liang Chen T Tianyu Gao X Xinyu Zhang J Jingjin Dong (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China) J Jiupeng Cao (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China) F Fangfang Wang W Wei Huang A Aifei Wang M Menglei Xu (Zhejiang Key Laboratory of Advanced Tandem Photovoltaic Technology Zhejiang Jinko Solar Co. Ltd. Haining Zhejiang China) T Tianshi Qin

Abstract

ABSTRACT Self‐trapped exciton (STE) emitters demonstrate exceptional luminescent downconversion (LDC) performance, achieving near‐unity photoluminescence quantum yields (PLQY) and broadband emission that overcomes Stokes shift limitations in conventional fluorophores. While these properties originate from precisely engineered Jahn–Teller distorted centers through optimized ligand fields and quantum confinement, practical challenges in stability and solution processability have hindered photovoltaic integration. In this work, we develop tin‐halide perovskite exhibiting unique low‐temperature (125°C) reversible melting–crystallization transitions for solution processability, as well as highly efficient (>90% PLQY) broadband LDC through zero‐dimensional STE emission. When integrated as the LDC layer, this reversible melting–crystallization STE emitter enhances the external quantum efficiency of silicon solar cells in the short‐wavelength region, leading to an absolute improvement in power conversion efficiency of over 0.75%. Our findings establish a new paradigm for low‐temperature melt‐processed perovskite integration in silicon photovoltaics, offering both economic viability and scalability for performance enhancement beyond current technological limits.

Article Details

Volume / Issue Vol. 38, Issue 46
Published August 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (16)

Y

Yuan xie

Y

Yupeng Zhang

J

Jungan Wang

Y

Ying Chu

Institute of Carbon Neutrality Zhejiang Wanli University Ningbo 315100 P.R. China

C

Chen Yu

M

Min Ye

State Key Laboratory of Natural and Biomimetic Drugs, School of Pharmaceutical Sciences, Peking University, 38 Xueyuan Road, Beijing 100191, China

L

Liang Chen

T

Tianyu Gao

X

Xinyu Zhang

J

Jingjin Dong

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China

J

Jiupeng Cao

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China

F

Fangfang Wang

W

Wei Huang

A

Aifei Wang

M

Menglei Xu

Zhejiang Key Laboratory of Advanced Tandem Photovoltaic Technology Zhejiang Jinko Solar Co. Ltd. Haining Zhejiang China

T

Tianshi Qin