Low‐Dimensional V–VI van der Waals Compound Photodetectors
Abstract
ABSTRACT This review for the first time provides a comprehensive overview on the low‐dimensional V–VI van der Waals compounds‐based photodetectors. It begins with the fundamental physical mechanisms for photodetection and the properties of various V–VI van der Waals compounds. Then, the preparation methods for producing low‐dimensional V–VI compounds have been presented. Following this, various photodetectors based on low‐dimensional V–VI compounds with distinct characteristics have been epitomized by categorizing them into trivial semiconductors and non‐trivial topological insulators. Subsequently, photodetectors built of V–VI compounds based heterostructures have been introduced, elaborating on the collaborative benefits enabled by heterostructuring. In the end, the future directions of this burgeoning domain have been proposed. On the whole, this review presents a full landscape of low‐dimensional V–VI van der Waals compound photodetectors, underscoring alternative paradigms for the implementation of the next generation of advanced optoelectronic devices and systems.
Article Details
Authors (8)
Yu Chen
Huanrong Liang
State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China
Xinyi Guan
State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China
Xiancheng Meng
State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China
Lizhao Su
State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China
Yuhang Ma
Jiandong Yao
School of Physical Science and Technology Third Generation Semiconductor Industry Research Institute Guangxi University Nanning China
Guowei Yang