Local carrier concentration variations due to partial dislocations associated with stacking faults in 4H–SiC homoepitaxial layers

Abstract

4H–SiC epitaxial layers grown on partial dislocations (PDs) associated with basal plane stacking faults (SFs) were investigated using micro-Raman scattering spectroscopy. It was found that the epitaxial layers grown on certain types of PD showed a local nitrogen doping variation along PD, where the nitrogen doping was enhanced on either side of PDs (perfect crystal or the SF side) and reduced on the other side. Furthermore, the variation pattern of nitrogen doping was inverted when the type of PD changed. Based on these results, the mechanism that the nitrogen doping variation occurred in the epitaxial layer grown on PDs is discussed.