Limited diffusion of silicon in GaN: A DFT study supported by experimental evidence

Abstract

Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using density functional theory (DFT) calculations, supported by ion implantation (I/I) and ultrahigh-pressure annealing (UHPA) experiments. Vacancy-mediated diffusion pathways were analyzed using the SIESTA code, with minimum energy paths (MEPs) and migration barriers determined via the nudged elastic band (NEB) method. The results indicate that Si diffusion barriers vary with the crystallographic direction, with the lowest barrier of 3.2 eV along [112¯0] and the highest barrier of 9.9 eV along [11¯00], rendering diffusion in this direction highly improbable. Phonon calculations confirm that temperature-induced reductions in effective diffusion barriers are minimal. Experimental validation using SIMS analysis on Si-implanted GaN samples subjected to UHPA (1450 °C, 1 GPa) confirms negligible Si diffusion under these extreme conditions. These findings resolve inconsistencies in prior reports and establish that Si in GaN remains highly stable, ensuring reliable doping profiles for advanced electronic and optoelectronic applications.