Lattice thermal conductivity of CsSnBr3/Cs2SnBr6 interface from <i>ab initio</i> based neuroevolution potential simulations

J Jinge Han (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,) J Jun Tang (The Dermatology Department of The First Affiliated Hospital of USTC, Division of Life Sciences and Medicine) H Hehuan Bai (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,) Y Yanru Guo (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,) H Haochen Tong Z Zhigang Zang (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,) R Ru Li (Henan Institute of Medical and Pharmaceutical Sciences, Zhengzhou University)

Abstract

Engineering of interface phonons is of vital importance to achieve extremely low thermal conducting candidates, which are crucial for energy conversion devices. Here, we reported an ultralow lattice thermal conductivity (0.173 W m−1 K−1) across the all-inorganic halide perovskite CsSnBr3/Cs2SnBr6 interface based on large-scale atomic molecular dynamics simulations. Accurate neuroevolution potential derived from ab initio density functional theory was employed to reveal the enhanced anharmonicity and phonon scattering/localization that contribute to the low lattice thermal transport capability. A strong mixed phonon liquid character and nonlinear interface density dependent thermal conductivity have been observed for the CsSnBr3/Cs2SnBr6 interface. The insights obtained from our findings might provide an efficient way to design crystalline anisotropic thermoelectric materials.

Article Details

Volume / Issue Vol. 163, Issue 4
Published July 28, 2025
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (7)

J

Jinge Han

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,

J

Jun Tang

The Dermatology Department of The First Affiliated Hospital of USTC, Division of Life Sciences and Medicine

H

Hehuan Bai

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,

Y

Yanru Guo

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,

H

Haochen Tong

Z

Zhigang Zang

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,

R

Ru Li

Henan Institute of Medical and Pharmaceutical Sciences, Zhengzhou University