Large-area two-dimensional MoO3 as a high-κ dielectric for van der Waals integration

Abstract

Abstract Large-area high-quality dielectrics are essential for the integration of two-dimensional (2D) transistors. However, this integration remains challenging, especially for conventional dielectrics that require deposition processes. Adopting van der Waals (vdW) dielectrics is attractive. Molybdenum trioxide (α-MoO 3 ) has been demonstrated as a vdW dielectric in 2D field-effect transistors (FETs), but previous demonstrations showed limited performance and small size. Here, we grow large-area single-crystalline MoO 3 with uniform thickness and explore its properties as a dielectric. Single-crystalline MoO 3 reaches the millimeter scale and maintains a high dielectric constant of ~ 18.5, low gate leakage of approximately 10 −2 A cm −2 at 3.0 MV cm −1, and a large breakdown field of ~ 26.75 MV cm −1 . Top-gated molybdenum disulfide (MoS 2 ) transistors exhibit an average subthreshold swing of ~ 71 mV dec −1 , and an on/off current ratio exceeding 10 8 . Furthermore, we demonstrate MoO 3 -based integrated circuits and low-power complementary metal-oxide-semiconductor (CMOS) inverters.